Electroluminescent device having window

ABSTRACT

In non-limiting example embodiments, an electroluminescent device may include a lower structure including an emission area, and an encapsulation structure located on the lower structure. The lower structure may include a window. The window may be a light transmitting region or a notch. The light transmitting region may be spaced apart from the emission area and completely or partially surrounded by the emission area in a plan view. The notch may be formed at one side of the lower structure and recessed inward in a plan view such that one side of the emission area substantially conforms to the notch.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.15/976,210, filed May 10, 2018, the entire contents of which is herebyincorporated by reference.

Korean Patent Application No. 10-2018-0002480, filed on Jan. 8, 2018, inthe Korean Intellectual Property Office, and entitled:“Electroluminescent Device Having Window,” is incorporated by referenceherein in its entirety.

BACKGROUND 1. Field

Non-limiting example embodiments relate to an electroluminescent devicehaving a window.

2. Description of the Related Art

In recent years, users of portable electronic devices have beenincreasingly carrying only one electronic device with a built-in camerafunction, rather than separately carrying a camera.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the non-limitingexample embodiment and, therefore, it may contain information that doesnot form the prior art that is already known in this country to a personof ordinary skill in the art.

SUMMARY

Non-limiting example embodiments are directed to an electroluminescentdevice that may include a lower structure including an emission area,and an encapsulation structure that is located on the lower structure.The lower structure may include a window. The window a lighttransmitting region or a notch. The light transmitting region may bespaced apart from the emission area and completely or partiallysurrounded by the emission area in a plan view. The notch may be formedat one side of the lower structure and recessed inward in a plan viewsuch that one side of the emission area substantially conforms to thenotch.

In some non-limiting example embodiments, the lower structure mayinclude an outer non-emission area that completely surrounds theemission area in a plan view and an inner non-emission area that iscompletely surrounded by the emission area in a plan view. The windowmay be a hole that is completely surrounded by the emission area in aplan view and formed in the inner non-emission area. The outernon-emission area may include an opened outer inorganic surface portion,and an outer inorganic surface portion. The outer inorganic surfaceportion may be connected to the opened outer inorganic surface portion,include at least a part that is located between the opened outerinorganic surface portion and the emission area, and completely surroundthe emission area in a plan view. The inner non-emission area mayinclude an inner inorganic surface portion that completely surrounds thehole in a plan view between the emission area and the hole. Theencapsulation structure may include an inorganic lower surface thatmakes a contact with an entire of the outer inorganic surface portionand an entire of the inner inorganic surface portion while not making acontact with the opened outer inorganic surface portion. The lowerstructure may include a first wire that extends in a direction from theemission area toward a first side of the hole and a second wire thatextends in a direction away from a second side of the hole that facesthe first side of the hole toward the emission area. The hole may belocated between the first wire and the second wire. The first and secondwires may be located on substantially the same layer, and the first wireand the second wire may have substantially the same signal state. Insome non-limiting example embodiments, in the inner non-emission area, aside face of the encapsulation structure may be located on a plane onwhich a side face of the lower structure is disposed. And, in the outernon-emission area, a side face of the encapsulation structure may beinward spaced apart from a side face of the lower structure.

In some non-limiting example embodiments, the lower structure mayinclude a connection member that bypasses the hole in a plan view to beelectrically connected between the first wire and the second wire, andat least a part of the connection member is located in the innernon-emission area. In some non-limiting example embodiments, a surfaceof at least a portion of the connection member may be included in theinner inorganic surface portion or may be located under the innerinorganic surface portion.

In some non-limiting example embodiments, the window may be the notch.The lower structure may include a first wire that extends in a directionfrom the emission area toward a first side of the notch and a secondwire that extends in a direction away from a second side of the notchthat faces the first side of the notch toward the emission area. Thenotch may be located between the first wire and the second wire. Thefirst and second wires may be located on substantially the same layer.The first and second wires may overlap the emission area, and the firstand second wires may have substantially the same driving current state.

In some non-limiting example embodiments, the lower structure mayinclude a connection member bypassing the notch in a plan view to beelectrically connected between the first wire and the second wire. Theconnection member may include a third wire that is located on a layerthat is substantially different from a layer on which the first andsecond wires are disposed, and a fourth wire that is located on a layeron which the first and second wires are disposed, and the third andfourth wires overlap the emission area. In some non-limiting exampleembodiments, the third wire or the fourth wire may be employed as anelectrode of a capacitor included in a pixel circuit of the lowerstructure.

In some non-limiting example embodiments, the window may be the notch.The lower structure may include an outer non-emission area thatcompletely surrounds the emission area in a plan view. The lowerstructure may include a first wire that extends in a direction from theemission area toward a first side of the notch and a second wire thatextends in a direction away from a second side of the notch that facesthe first side of the notch toward the emission area. The notch may belocated between the first wire and the second wire. The first and secondwires may be located on substantially the same layer. The outernon-emission area may include an opened outer inorganic surface portion,and an outer inorganic surface portion. The outer inorganic surfaceportion may be connected to the opened outer inorganic surface portion,have at least a part that is located between the opened outer inorganicsurface portion and the emission area, and completely surround theemission area in a plan view. The encapsulation structure may include aninorganic lower surface that makes a contact with an entire of the outerinorganic surface portion while not making a contact with the openedouter inorganic surface portion. In some non-limiting exampleembodiments, a width of the outer non-emission area at the side of thelower structure where the notch is provided may be substantially smallerthan a width of the outer non-emission area at the other side of thelower structure opposite the side of the lower structure where the notchis provided.

In some non-limiting example embodiments, the lower structure mayinclude a connection member that bypasses the notch in a plan view to beelectrically connected between the first wire and the second wire, andat least a part of the connection member may be located in the outernon-emission area. In some non-limiting example embodiments, a surfaceof at least a portion of the connection member may be included in theouter inorganic surface portion or may be located under at least one ofthe opened outer inorganic surface portion and the outer inorganicsurface portion.

In some non-limiting example embodiments, the encapsulation structuremay be a flexible multilayer.

In some non-limiting example embodiments, the window may be the lighttransmitting region that is completely surrounded by the emission areain a plan view, the lower structure may include an electroluminescentunit having a first electrode, a second electrode, and an intermediatelayer located between the first electrode and the second electrode, thelower structure may include a first wire that extends in a directionfrom the emission area toward a first side of the light transmittingregion and a second wire that extends in a direction away from a secondside of the light transmitting region that faces the first side of thelight transmitting region toward the emission area, the lighttransmitting region may be located between the first wire and the secondwire, the first and second wires may be located on substantially thesame layer, the first and second wires may overlap the emission area,the first wire and the second wire may supply a driving current to thefirst electrode or the second electrode, and the first and second wiresmay have substantially the same driving current state.

In some non-limiting example embodiments, the lower structure mayinclude a connection member that bypasses the light transmitting regionin a plan view to be electrically connected between the first wire andthe second wire. The connection member may include a third wire that islocated on a layer that is substantially different from a layer on whichthe first and second wires are disposed, and a fourth wire that islocated on a layer on which the first and second wires are disposed. Thethird and fourth wires may overlap the emission area. In somenon-limiting example embodiments, the third wire or the fourth wire maybe employed as an electrode of a capacitor included in a pixel circuitof the lower structure.

In some non-limiting example embodiments, the electroluminescent devicemay further comprise a touch panel that is located on the encapsulationstructure. The touch panel may include a first sensing electrode that isadjacent to the window and a second sensing electrode that is locatedsubstantially farther from the window than the first sensing electrode.An area of the first sensing electrode may be substantially smaller thanan area of the second sensing electrode. In some non-limiting exampleembodiments, the lower structure may have an inorganic surface portion.The encapsulation structure may have an inorganic lower surface making acontact with an entire of the inorganic surface portion. The firstsensing electrode may not overlap an area where the inorganic surfaceportion of the lower structure makes a contact with the inorganic lowersurface of the encapsulation structure.

In some non-limiting example embodiments, the electroluminescent devicemay further comprise a touch panel that is located on the encapsulationstructure. The touch panel may include a first dummy electrode that isadjacent to the window and a second dummy electrode that is locatedsubstantially farther from the window than the second dummy electrode.An area of the first dummy electrode may be substantially smaller thanan area of the second dummy electrode. In some non-limiting exampleembodiments, the lower structure may have an inorganic surface portion.The encapsulation structure may have an inorganic lower surface making acontact with an entire of the inorganic surface portion. The first dummyelectrode may not overlap an area where the inorganic surface portion ofthe lower structure makes a contact with the inorganic lower surface ofthe encapsulation structure.

In some non-limiting example embodiments, the electroluminescent devicemay further comprise a touch panel that is located on the encapsulationstructure and may include a first touch electrode. The first touchelectrode may include a first portion that extends in a direction fromthe emission area toward a first side of the window, a second portionthat extends in a direction away from a second side of the window thatfaces the first side of the window toward the emission area, and a firstconnection member that bypasses the window in a plan view to beconnected between the first and the second portions of the first touchelectrode. The window may be located between the first and the secondportions of the first touch electrode.

In some non-limiting example embodiments, the lower structure may have anon-emission area, and the first connection member may overlap thenon-emission area. As one example, the window may be the notch, thelower structure may have an outer non-emission area completelysurrounding the emission area in a plan view, and the first connectionmember may overlap the outer non-emission area. As another example, thewindow may be the light transmitting region, the lower structure mayhave a non-emission area having at least a portion located between thelight transmitting region and the emission area, and the firstconnection member may overlap the non-emission area.

In some non-limiting example embodiments, the window may be the lighttransmitting region and the touch panel may further include a secondtouch electrode, the second touch electrode may include a first portionthat extends in a direction from the emission area toward a third sideof the window, a second portion that extends in a direction away from afourth side of the window that faces the third side of the window towardthe emission area, and a second connection member that bypasses thewindow in a plan view to be connected between the first and secondportions of the second touch electrode. The window may be locatedbetween the first and second portions of the second touch electrode. Thefirst and second touch electrodes may extend in substantially differentdirections. The first and second connection members may not overlap eachother. In some non-limiting example embodiments, the second connectionmember may overlap the non-emission area of the lower structure, and thenon-emission area of the lower structure may overlap the firstconnection member.

In some non-limiting example embodiments, the lower structure mayinclude an outer bus wire that is adjacent to a first side of theemission area, first and second terminal wires that are connected to theouter bus wire and supply a driving current to the outer bus wire fromoutside the lower structure, and current wires that extend to cross theemission area and are connected to the outer bus wire to receive thedriving current from the outer bus wire. A distance from the first sideof the emission area to the window may be no less than a distance from asecond side of the emission area that is substantially opposite to thefirst side of the emission area to the window. A distance between thefirst terminal wire and the window may be substantially the same as adistance between the second terminal wire and the window. The lowerstructure may include an outer non-emission area that completelysurrounds the emission area in a plan view. The outer non-emission areamay include an outer inorganic surface portion that completely surroundsthe emission area in a plan view. The encapsulation structure mayinclude an inorganic lower surface that makes a contact with an entireof the outer inorganic surface portion.

In some non-limiting example embodiments, the outer non-emission areamay include an opened outer inorganic surface portion. The outerinorganic surface portion may be connected to the opened outer inorganicsurface portion, and include at least a part that is located between theopened outer inorganic surface portion and the emission area. Theinorganic lower surface may not make a contact with the opened outerinorganic surface portion.

In some non-limiting example embodiments, the encapsulation structuremay be a flexible multilayer.

In some non-limiting example embodiments, the outer non-emission areamay include an opened outer inorganic surface portion, the outerinorganic surface portion may be connected to the opened outer inorganicsurface portion, and may include at least a part located between theopened outer inorganic surface portion and the emission area, and theinorganic lower surface of the encapsulation structure may not make acontact with the opened outer inorganic surface portion.

In some non-limiting example embodiments, the window may be the notch,the notch may be recessed inward in a first direction in a plan view tohave a sloped side face, the lower structure may include a current wireand an outer bus wire that includes a sloped portion that corresponds tothe sloped side face of the notch, the current wire may be connected tothe sloped portion of the outer bus wire, may extend in the firstdirection from the sloped portion of the outer bus wire toward theemission area, and may be integrally formed as one-piece with the outerbus wire, and the current wire may overlap the emission area.

In some non-limiting example embodiments, the sloped portion may includefirst parts extending in a second direction that is substantiallydifferent from the first direction and second parts extending in thefirst direction, the first parts and the second parts may be alternatelyconnected to each other such that the sloped portion has a substantiallystepped shape, the current wire may be connected to the first part ofthe sloped portion of the outer bus wire, the lower structure mayinclude an outer non-emission area that completely surrounds theemission area in a plan view, the outer non-emission area may include anouter inorganic surface portion that completely surrounds the emissionarea in a plan view, and the encapsulation structure may include aninorganic lower surface that makes a contact with an entire of the outerinorganic surface portion.

In some non-limiting example embodiments, the sloped portion may includeat least two of the first parts having substantially different lengthsto be connected to substantially different numbers of the current wires,and/or at least two of the second parts having substantially differentlengths.

In some non-limiting example embodiments, the outer non-emission areamay include an opened outer inorganic surface portion, the outerinorganic surface portion may be connected to the opened outer inorganicsurface portion, and may include at least a part that is located betweenthe opened outer inorganic surface portion and the emission area, andthe encapsulation structure may not make a contact with the opened outerinorganic surface portion.

In some non-limiting example embodiments, the encapsulation structuremay be a flexible multilayer.

In some non-limiting example embodiments, the sloped portion may includeat least two of the first parts having substantially different lengthsto be connected to substantially different numbers of the current wires,and/or at least two of the second parts having substantially differentlengths.

In some non-limiting example embodiments, the outer non-emission areamay include an opened outer inorganic surface portion, the outerinorganic surface portion may be connected to the opened outer inorganicsurface portion and may include at least a part that is located betweenthe opened outer inorganic surface portion and the emission area, andthe encapsulation structure may not make a contact with the opened outerinorganic surface portion.

In some non-limiting example embodiments, the sloped portion may includeat least two of the first parts having substantially different lengthsto be connected to substantially different numbers of the current wires,and/or at least two of the second parts having substantially differentlengths.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail non-limiting example embodiments with reference to theattached drawings in which:

FIG. 1 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 2 illustrates a cross-sectional view taken along the line I-I′ inFIG. 1.

FIG. 3 illustrates a polarization film that may be included in theelectroluminescent device shown in FIG. 1 and FIG. 2.

FIG. 4 illustrates signal wiring included in a lower structure shown inFIG. 1 and FIG. 2.

FIG. 5 illustrates signal wiring included in a lower structure shown inFIG. 1 and FIG. 2.

FIG. 6 illustrates signal wiring included in a lower structure shown inFIG. 1 and FIG. 2.

FIG. 7 illustrates signal wiring included in a lower structure shown inFIG. 1 and FIG. 2.

FIG. 8 illustrates a driving current supply structure included in thelower structure shown in FIG. 1 and FIG. 2.

FIG. 9 illustrates an enlarged view of the periphery of a lighttransmitting region of the driving current supply structure included inthe lower structure shown in FIG. 1 and FIG. 2.

FIG. 10 illustrates the driving current supply structure having an innerbus wire according to a non-limiting example embodiment.

FIG. 11 illustrates the driving current supply structure having theinner bus wire according to a non-limiting example embodiment.

FIG. 12 illustrates first and second touch electrodes included in atouch panel that is formed on the encapsulation structure in the area Aof FIG. 1, according to a non-limiting example embodiment.

FIG. 13 illustrates a bypass structure of a touch electrode according toa non-limiting example embodiment.

FIG. 14 illustrates first and second touch electrodes included in atouch panel formed on the encapsulation structure in the area A of FIG.1, according to a non-limiting example embodiment.

FIG. 15 illustrates first and second touch electrodes included in atouch panel formed on the encapsulation structure in the area A of FIG.1, according to a non-limiting example embodiment.

FIG. 16 illustrates a touch electrode included in a touch panel formedon the encapsulation structure in the area A of FIG. 1, according to anon-limiting example embodiment.

FIG. 17 illustrates an upper touch electrode included in a touch panelformed on the encapsulation structure of FIG. 1, according to anon-limiting example embodiment.

FIG. 18 illustrates lower touch electrodes included in the touch panelof FIG. 17.

FIG. 19 illustrates a touch panel to which the upper touch electrodeshown in FIG. 17 and the lower touch electrode of FIG. 18 are combined.

FIG. 20 illustrates a touch panel formed on the encapsulation structureof FIG. 1, according to a non-limiting example embodiment.

FIG. 21 illustrates a cross-sectional view taken along the line I-I′ inFIG. 1, according to a non-limiting example embodiment.

FIG. 22 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 23 illustrates a cross-sectional view taken along the line I-I′ inFIG. 22, according to a non-limiting example embodiment.

FIG. 24 illustrates a cross-sectional view of an area C and an area D inFIG. 23 according to a non-limiting example embodiment.

FIG. 25 illustrates a cross-sectional view of the area C and the area Din FIG. 23 according to a non-limiting example embodiment.

FIG. 26 illustrates a cross-sectional view of the area C and the area Din FIG. 23 according to a non-limiting example embodiment.

FIG. 27 illustrates a cross-sectional view of the area C and the area Din FIG. 23 according to a non-limiting example embodiment.

FIG. 28 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 29 illustrates a cross-sectional view taken along the line in FIG.28, according to a non-limiting example embodiment.

FIG. 30 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 31 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 32 illustrates a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

FIG. 33 illustrates a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

FIG. 34 illustrates a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

FIG. 35 illustrates a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

FIG. 36 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 37 illustrates a schematic diagram of wires in a first lighttransmitting region and a second light transmitting region of FIG. 36,according to a non-limiting example embodiment.

FIG. 38 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 39 illustrates a schematic diagram of a wiring structure in theelectroluminescent device shown in FIG. 38, according to a non-limitingexample embodiment.

FIG. 40 illustrates a driving current supply structure included in theelectroluminescent device shown in FIG. 38, according to a non-limitingexample embodiment.

FIG. 41 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 42 illustrates signal wiring in the electroluminescent device shownin FIG. 41, according to a non-limiting example embodiment.

FIG. 43 illustrates cross-sectional view taken along the lines II-II′and in FIG. 41, according to a non-limiting example embodiment.

FIG. 44 illustrates a cross-sectional view taken along the lines II-II′and in FIG. 41, according to a non-limiting example embodiment.

FIG. 45 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 46 illustrates the driving current supply structure included in thearea E of FIG. 45 according to a non-limiting example embodiment.

FIG. 47 illustrates the driving current supply structure included in thearea E of FIG. 45 according to a non-limiting example embodiment.

FIG. 48 illustrates the driving current supply structure included in thearea E of FIG. 45 according to a non-limiting example embodiment.

FIG. 49 illustrates the driving current supply structure included in thearea E of FIG. 45 according to a non-limiting example embodiment.

FIG. 50 illustrates the driving current supply structure included in thearea E of FIG. 45, according to a non-limiting example embodiment.

FIG. 51 illustrates the driving current supply structure included in thearea E of FIG. 45 according to a non-limiting example embodiment.

FIG. 52 illustrates a top plan view of an electroluminescent deviceaccording to a non-limiting example embodiment.

FIG. 53 illustrates a cross-sectional view taken along the line II-II′in FIG. 52, according to a non-limiting example embodiment.

FIG. 54 illustrates a cross-sectional view taken along the line IV-VI′in FIG. 52, according to a non-limiting example embodiment.

DETAILED DESCRIPTION

Non-limiting example embodiments will now be described more fullyhereinafter with reference to the accompanying drawings; they may beembodied in substantially different forms and should not be construed aslimited to the non-limiting example embodiments set forth herein.Rather, these non-limiting example embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey exampleimplementations to those skilled in the art. These non-limiting exampleembodiments are not exclusive but cooperative such that a technicalcontent disclosed in one non-limiting example embodiment can be appliedto another non-limiting example embodiment unless the application isentirely impossible in a technical view or unless there is a clearexplanation of impossibility of application. In the drawing figures, thedimensions of layers and regions may be exaggerated for clarity ofillustration. Like reference numerals refer to like elements throughout.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present. The word“on” or “above” means positioned on or below the object portion, anddoes not necessarily mean positioned on the upper side of the objectportion based on a gravitational direction.

In addition, unless explicitly described to the contrary, the word“comprise” and variations such as “comprises” or “comprising” will beunderstood to imply the inclusion of stated elements but not theexclusion of any other elements.

In addition, in this specification, the phrase “in a plan view” meansviewing a target portion from the top, and the phrase “on across-section” means viewing a cross-section formed by verticallycutting a target portion from the side.

FIG. 1 is a top plan view of an electroluminescent device according to anon-limiting example embodiment. FIG. 2 is a cross-sectional view takenalong the line I-I′ in FIG. 1, according to a non-limiting exampleembodiment.

Referring to FIG. 1 and FIG. 2, an electroluminescent device accordingto the present non-limiting example embodiment may include a lowerstructure 25 and an encapsulation structure 31. The lower structure 25may include a buffer layer 11, an active layer 12, a first gateinsulation layer 13, a first gate electrode 14, a second gate insulationlayer 15, a second gate electrode 16, an interlayer insulation layer 17,a source/drain electrode 18, a planarization layer 19, a lower electrode20, a pixel defining layer 21, an intermediate layer 22, an upperelectrode 23, and a passivation layer 24. The active layer 12 mayinclude a source region 12 s, a drain region 12 d, and a channel region12 c. The source/drain electrode 18 may include a source electrode 18 sand a drain electrode 18 d. The intermediate layer may include a holetransporting layer 22 a, an emission layer 22 b, and an electrontransporting layer 22 c. The active layer 12, the first gate insulationlayer 13, the first gate electrode 14, the second gate insulation layer15, the second gate electrode 16, and the source/drain electrode 18 mayconstitute a transistor. The lower electrode 20, the intermediate layer22, and the upper electrode 23 may constitute an electroluminescenceunit.

The encapsulation structure 31 may be provided as a multilayerincluding, for example, a first inorganic layer 31 a, an organic layer31 b, and a second inorganic layer 31 c and having flexibility. Inanother implementation, the encapsulation structure 31 may be providedas a rigid encapsulation structure having an inorganic sealant and aninorganic glass substrate.

The buffer layer 11, the first gate insulation layer 13, the second gateinsulation layer 15, and the interlayer insulation layer 17 may includean inorganic material. The planarization layer 19 and the pixel defininglayer 21 may include an insulating organic material. The holetransporting layer 22 a, the emission layer 22 b, and the electrontransporting layer 22 c may include a conductive or semi-conductiveorganic material. According to a non-limiting example embodiment, theemission layer 22 b may include an inorganic material such as quantumdots.

The lower structure 25 may include a plurality of pixels PX. Each pixelPX may include an emission zone EZ and a pixel circuit zone PCZ. In theemission zone EZ, the lower electrode 20, the emission layer 22 b, andthe upper electrode 23 may all be overlapped. A pixel circuit may belocated in the pixel circuit zone PCZ for light emission of the emissionzone EZ. The pixel circuit may be variously formed depending on adriving method. According to a non-limiting example embodiment, thepixel circuit may include at least two transistors, a capacitor, a scanwire, an emission wire, and a data wire.

According to a non-limiting example embodiment, an outer edge of theemission zone EZ may be located inside an outer edge of the pixelcircuit zone PCZ. In another implementation, the emission zone EZ maypartially overlap the pixel circuit zone PCZ. According to anon-limiting example embodiment, a shape of the pixel circuit zone PCZmay be a substantial quadrangle. The pixel circuit zones PCZs may form apixel circuit area PCA. When a shape of the pixel circuit zone PCZ is asubstantial quadrangle, a shape of the pixel circuit area PCA may be asubstantial matrix.

According to a non-limiting example embodiment, the pixel structure 25includes a first pixel PX1, a second pixel PX2, and a third pixel PX3.For example, the first, second, and third pixels PX1, PX2, and PX3 mayrealize red, green, and blue, respectively.

The lower structure 25 may include an emission area 100 and anon-emission area 200. A plurality of emission zones EZ may be arrangedin the emission area 100. The non-emission area 200 may include an outernon-emission area 200 a and an inner non-emission area 200 b. The outernon-emission area 200 a may include an outer inorganic surface portion220 that surrounds the emission area 100 and an outer buffer area 201that is located between the emission area 100 and the outer inorganicsurface portion 220. The inner non-emission area 200 b may include alight transmitting region 210 that is surrounded by the emission area100 and is used as a window, and an inner buffer layer 202 that islocated between the emission area 100 and the light transmitting region210. Here, the inorganic surface portion implies a part of or theentirety of the inorganic surface.

The light transmitting region 210 may have substantially higher lighttransmittance than the emission area 100 or the inner buffer area 202,and may be an area through which light incident on at least one opticalmember 10 located under the light transmitting region 210 downwardlypasses or an area through which light emitted from the optical member 10located under the light transmitting region 210 upwardly passes. Theoptical member 10 may be, or include a camera, a flash, a biometric unitand the like. In the present non-limiting example embodiment, the lighttransmitting region 210 may have a non-hole structure. The lighttransmitting region 210 has a size that is substantially greater thanthat of the pixel circuit zone PCZ, and, therefore, it is substantiallydifferent from a light transmitting zone in a pixel for implementationof a transparent display.

The lower electrode 20 and the emission layer 22 b may be individuallypatterned layers, and may not be formed in the light transmitting region210. Here, the individually patterned layer implies a layer having a setof patterns that are individually formed per pixel. The holetransporting layer 22 a, the electron transporting layer 22 c, and theupper electrode 23 may be common pattern layers, and have a shape fromwhich a portion corresponding to the light transmitting region 210 isremoved. Here, the meaning of having the partially removed shape notonly includes a case that the shape is partially removed through aremoving process but also includes a case that the shape is partiallynot formed during a forming process. The passivation layer 24 mayinclude a conductive or semi-conductive organic layer having arelatively high refractive index, and may be a common pattern layerhaving a shape from which a portion corresponding to the lighttransmitting region 210 is removed. Here, the common pattern layerimplies a layer having patterns that are connected to each other ratherthan being individually formed for each pixel.

According to a non-limiting example embodiment, the hole transportinglayer 22 a, the electron transporting layer 22 c, and the upperelectrode 23 may be formed by, for example, an evaporation depositionprocess which adopts an open mask that hides a portion corresponding tothe light transmitting region 210. According to a non-limiting exampleembodiment, a selective removal process may be performed such that anopen mask that does not hide the portion corresponding to the lighttransmitting region 210 is adopted and the evaporation depositionprocess is performed to form the hole transporting layer 22 a, theelectron transporting layer 22 c, and the upper electrode 23, and thenlaser beams may be irradiated to or an etching solution may be suppliedto the portion corresponding to the light transmitting region 210.According to a non-limiting example embodiment, the hole transportinglayer 22 a and the electron transporting layer 22 c may be formed by aprinting process during which a solution is not applied to the portioncorresponding to the light transmitting region 210.

The encapsulation structure 31 may include an inorganic lower surface 31d. The entire of the outer inorganic surface portion 220 may make adirect contact with the inorganic lower surface 31 d of theencapsulation structure 31 to form an inorganic-inorganic contact linethat surrounds the emission area 100. By forming the inorganic-inorganiccontact line, moisture and oxygen that may be permeated from a sidesurface of the emission area 100 may be efficiently blocked compared to,for example, inorganic-organic contact line or organic-organic contactline. Moisture and oxygen that may permeate from the bottom side of theemission area 100 may be blocked by an inorganic layer structure. Theinorganic layer structure may be an inorganic layer that expands tocorrespond to the emission area 100 and the non-emission area 200, whileno hole is formed. In this case, examples of the inorganic layer mayinclude the buffer layer 11. In another implementation, the inorganiclayer structure may be an inorganic layer that expands to correspond tothe emission area 100 and the non-emission area 200 while having a holefilled with a substantially different inorganic material. In this case,examples of the inorganic layer structure may include the first gateinsulation layer 13, the second gate insulation layer 15, and/or theinterlayer insulation layer 17. In an implementation, only an inorganicmaterial is filled between the outer inorganic surface portion 220 andthe inorganic layer structure, which may efficiently block moisture oroxygen.

The lower structure 25 may include a first side 25 a, a second side 25 blocated substantially opposite to the first side 25 a, a third side 25 clocated between the first side 25 a and the second side 25 b, and afourth side 25 d located substantially opposite to the third side 25 c.A driving current may be supplied to the first side 25 a of the lowerstructure 25 to drive the electroluminescent unit. The lighttransmitting region 210 may be located substantially closer to thesecond side 25 b than to the first side 25 a of the lower structure. InFIG. 1, the light transmitting region 210 is located substantiallycloser to the fourth side 25 d of the lower structure 25 than to thethird side 25 c, but, for example, the light transmitting region 210 maybe located at substantially the same distance from the third side 25 cof the lower structure 25 and from the fourth side 25 d.

According to a non-limiting example embodiment, the width of the outernon-emission area 200 a may be substantially different at the first side25 a and the second side 25 b of the lower structure 25, while the widthmay be substantially the same at the third side 25 c and the fourth side25 d of the lower structure 25. According to a non-limiting exampleembodiment, the width of the outer non-emission area 200 a at the firstside 25 a of the lower structure 25 may be substantially greater thanthe width of the outer non-emission area 200 a at the second side 25 bof the lower structure 25. When the driving current for driving of theelectroluminescent unit is provided to the first side 25 a of the lowerstructure 25, a spatial margin of wiring design for incoming andoutgoing of the driving current to the first side 25 a may be secured.Here, the width implies an average width acquired by dividing anoccupied area by a length.

According to a non-limiting example embodiment, the width of the outerbuffer area 201 may be substantially different at the first side 25 aand the second side 25 b of the lower structure 25, while the width maybe substantially the same at the third side 25 c and the fourth side 25d of the lower structure 25. According to a non-limiting exampleembodiment, the width of the outer buffer area 201 at the second side 25b of the lower structure 25 may be substantially smaller than the widthof the outer buffer area 201 at the third side 25 c or at the fourthside 25 d of the lower structure 25. When peripheral circuits such as ascan driver, an emission driver, and the like are integrated in theouter buffer 201 at the third side 25 c and the fourth side 25 d of thelower structure 25, the width of the outer buffer area 201 may be moreincreased at the third side 25 c or at the fourth side 25 d of the lowerstructure 25 than at the second side 25 b. According to a non-limitingexample embodiment, the width of the outer buffer area 201 at the firstside 25 a of the lower structure 25 may be substantially greater thanthe width of the outer buffer area 201 at the second side 25 b of thelower structure 25. When the driving current for driving of theelectroluminescent unit is provided to the first side 25 a of the lowerstructure 25, a spatial margin of wiring design for incoming andoutgoing of the driving current to the first side 25 a may be secured.

According to a non-limiting example embodiment, the first side 25 andthe second side 25 b of the lower structure 25 have substantiallydifferent widths, while they may be substantially the same at the thirdside 25 c and the fourth side 25 d of the lower structure. According toa non-limiting example embodiment, the width of the outer inorganicsurface portion 220 at the first side 25 a of the lower structure 25 maybe substantially greater than the width of the outer inorganic surfaceportion 220 at the second side 25 b of the lower structure 25. When thedriving current for driving of the electroluminescent unit is providedto the first side 25 a of the lower structure 25, a spatial margin ofwiring design for incoming and outgoing of the driving current to thefirst side 25 a may be secured.

The electroluminescent device according to a non-limiting exampleembodiment may bendable, foldable, rollable, stretchable, or flexible byan external force applied thereto by a hand of a final user, and thelike. Here, the final user implies not a manufacturer but a consumer whopurchases a complete electroluminescent device or a complete productincluding the electroluminescent device and uses it according to itspurpose. In another implementation, the electroluminescent device may bea curved electroluminescent device where a curved rigid glass substrateis attached or a flat type of electroluminescent device attached to aflat rigid glass substrate.

FIG. 3 illustrates a polarization film that may be included in theelectroluminescent device shown in FIG. 1 and FIG. 2.

Referring to FIG. 3, the polarization film 39 may be a common patternlayer having a shape from which a portion corresponding to the lighttransmitting region 210 is removed. The polarization film 39 may belocated on the encapsulation structure 31. As shown in FIG. 3, thepolarization film 39 may have a hole h1 corresponding to the lighttransmitting region 210.

FIG. 4 shows signal wires included in the lower structure 25 of FIG. 1and FIG. 2, according to a non-limiting example embodiment.

Referring to FIG. 4, the lower structure 25 may include a first wire 41a extending in a direction toward a first side 210 a of the lighttransmitting region 210 from the emission area 100, and a second wire 41b extending away from a second side 210 b that faces the first side 210a of the light transmitting region 210 toward the emission area 100. Thefirst and second wires 41 a and 41 b may include an inorganic materialsuch as a metal. The light transmitting region 210 may be locatedbetween the first wire 41 a and the second wire 41 b. The first andsecond wires 41 a and 41 b may be located on substantially the samelayer. The first and second wires 41 a and 41 b may be formed bysubstantially the same process.

The first wire 41 a and the second wire 41 b may be electricallyseparated from each other, and a first driver 42 a and a second driver42 b may supply substantially the same signal to the first wire 41 a andthe second wire 41 b with substantially the same timing so that thefirst and second wires 41 a and 41 b have substantially the same signalstate. The signal may be various signals such as a scan signal, anemission signal, or a data signal. Here, the expression that the firstand second wires 41 a and 41 b have substantially the same signal statedoes not mean that the first wire 41 a and the second wire 41 b alwayshave substantially the same signal state. Thus, the first and secondwires 41 a and 41 b may have substantially different signal statesthrough the first and second drivers 42 a and 42 b because the first andsecond drivers 42 a and 42 b are connected to the first and second wires41 a and 41 b, respectively.

According to a non-limiting example embodiment, the first and seconddrivers 42 a and 42 b may be first and second data drivers, and thefirst and second wires 41 a and 41 b may be first and second data wiresthat apply a data signal to a source area of a transistor included ineach pixel circuit. In this case, the first data driver may be locatedon a first side of the lower structure 25 and the second data driver maybe located on a second side that is substantially different from thefirst side of the lower structure 25. Here, the first side and thesecond side may be located substantially opposite to each other. Thedata signal may be an analog signal. In addition, the presentnon-limiting example embodiment may be applied to a driving currentsupply structure.

FIG. 5 shows signal wires included in the lower structure of FIG. 1 andFIG. 2, according to a non-limiting example embodiment.

Referring to FIG. 5, the lower structure 25 includes a connection member43 that bypasses the light transmitting region 210 to be electricallyconnected between the first wire 41 a and the second wire 41 b. Theconnection member 43 may include an inorganic material such as a metal.The connection member 43 may be located on a layer that is substantiallydifferent from a layer on which the first and second wires 41 a and 41 bare located, and may be connected to the first wire 41 a and the secondwire 41 b through a contact c. In another implementation, the first wire41 a, the second wire 41 b, and the connection member 43 may beintegrally formed as one-piece. For example, the first wire 41 a, thesecond wire 41 b, and the connection member 43 may be formed bysubstantially the same process. The connection member 43 may overlaponly the inner buffer area 202. When the connection member 43 overlapsonly the inner buffer area 202, the degrees of freedom of signal wiringdesign and/or the degrees of freedom of driving current supply structuredesign in the emission area 100 may be enhanced.

In an implementation, the first wire 41 a and the second wire 41 b maybe connected to each other by the connection member 43, one of the firstand second drivers 42 a and 42 b may be omitted, and the first andsecond wires 41 a and 41 b may have substantially the same signal state.According to a non-limiting example embodiment, the first and seconddrivers 42 a and 42 b may be first and second scan drivers, and firstand second wires 41 a and 41 b may be first and second wires applying ascan signal to a gate electrode of the transistor of each pixel circuit.According to a non-limiting example embodiment, the first driver 42 aand the second driver 42 b may be a first emission driver and a secondemission driver, and the first wire 41 a and the second wire 41 b may bea first emission wire and a second emission wire that apply an emissionsignal to the gate electrode of the transistor of each pixel circuit.The scan signal and the emission signal may be digital signals. Inaddition, the present non-limiting example embodiment may be applied toa driving current supply structure.

FIG. 6 shows signal wiring included in the lower structure of FIG. 1 andFIG. 2, according to a non-limiting example embodiment.

Referring to FIG. 6, the connection member 43 may be located on a layerthat is substantially different from a layer on which the first andsecond wires 41 a and 41 b are located, and may be connected to thefirst wire 41 a and the second wire 41 b through the contact c. Theconnection member 43 may overlap only the emission area 100. Theconnection member 43 may overlap the emission area 100, and theconnection member 43 may be located on a layer that is substantiallydifferent from a layer on which the first and second wires 41 a and 41 bare located and, therefore, degrees of freedom in wire design in theemission area 100 may be secured.

According to a non-limiting example embodiment, the connection member 43may be integrally formed as one-piece with the first and second wires 41a and 41 b unless the degrees of freedom in the wire design in theemission area 100 is exceedingly limited.

FIG. 7 shows signal wiring included in the lower structure of FIG. 1 andFIG. 2, according to a non-limiting example embodiment.

Referring to FIG. 7, the connection member 43 may be located on a layerthat is substantially different from a layer on which the first andsecond wires 41 a and 41 b are located, and may be connected to thefirst and second wires 41 a and 41 b through the contact c. Theconnection member 43 may overlap both the emission area 100 and an innerbuffer area 202. The connection member 43 may overlap the emission area100, and the connection member 43 may be located on a layer that issubstantially different from a layer on which the first and second wires41 a and 41 b are located and, thus, the degrees of freedom in wiringdesign in the emission area 100 may be secured.

According to a non-limiting example embodiment, the connection member 43may be integrally formed as one-piece with the first and second wires 41a and 41 b without excessively limiting the degrees of freedom in thewire design in the emission area 100.

FIG. 8 shows a driving current supply structure included in the lowerstructure shown in FIG. 1 and FIG. 2 according to a non-limiting exampleembodiment. For example, the driving current supply structure may supplya driving current to a lower electrode 20.

Referring to FIG. 8, the lower structure 25 may include a first wire 41a extending in a direction toward a first side 210 a of a lighttransmitting region 210 from an emission area 100, and a second wire 41b extending away from a second side 210 b that faces the first side 210a of the light transmitting region 210 toward the emission area 100. Thelight transmitting region 210 may be located between the first wire 41 aand the second wire 41 b. The first wire 41 a and the second wire 41 bmay be located on substantially the same layer. The lower structure 25may include a connection member 43 that bypasses or circumvents thelight transmitting region 210 to be electrically connected between thefirst wire 41 a and the second wire 41 b. The first wire 41 a and thesecond wire 41 b may be connected by the connection member 43, and,thus, the first wire 41 a and the second wire 41 b may havesubstantially the same driving current state, and a delay oftransmission of a driving current due to the light transmitting region210 at the periphery of the light transmitting region 210 may bereduced.

The connection member 43 may include a third wire 41 c that is locatedon a layer that is substantially different from a layer on which thefirst and second wires 41 a and 41 b are located, and is connected tothe first wire 41 a through a contact c. The connection member 43 mayinclude a fourth wire 41 d that is located on a layer that issubstantially the same as a layer on which the first and second wires 41a and 41 b are located, and is connected to the third wire 41 c throughthe contact c. The connection member 43 may include a fifth wire 41 ethat is located on substantially the same layer as a layer on which thethird wire 41 c is located, and is connected to the second and fourthwires 41 b and 41 d through the contact c.

The first and second wires 41 a and 41 b may be substantially parallelwith the fourth wire 41 d. And, the first and second wires 41 a and 41 bmay be substantially perpendicular to the third and fifth wires 41 c and41 e. The third and fifth wires 41 c and 41 e may be used as electrodesincluded in capacitors of pixel circuits. For example, the third wire 41c may be commonly used as an electrode of a capacitor included in afirst pixel circuit and an electrode of a capacitor included in a secondpixel circuit that is adjacent to the first pixel circuit. As anotherexample, the fifth wire 41 e may be commonly used as an electrode of acapacitor included in a third pixel and an electrode of a capacitorincluded in a fourth pixel circuit that is adjacent to the third pixelcircuit. When the third and fifth wires 41 c and 41 e are used aselectrodes included in the capacitors of the pixel circuits, integrationof the pixel circuit may be increased by avoiding forming additionalelectrodes included in the capacitors of the pixel circuits.

According to a non-limiting example embodiment, an inner bus wire havinga ring shape that surrounds the periphery of the light transmittingregion 210 may connect the first and second wires 41 a and 41 b. Theinner bus wire may be integrally formed as one-piece with the first andsecond wires 41 a and 41 b, and may be connected to another wire thatextends in substantially parallel with the fifth wire 41 e through acontact.

FIG. 9 is an enlarged view of the periphery of the light transmittingregion 210 of the driving current supply structure included in the lowerstructure shown in FIG. 1 and FIG. 2, according to a non-limitingexample embodiment.

Referring to FIG. 9, the driving current supply structure may supply adriving current to the lower electrode 20. The driving current supplystructure may include a plurality of first wires 41 f that extend in afirst direction toward the second side 25 b from the first side 25 a ofthe lower structure 25. The first wires 41 f may cross the pixel circuitzone PCZ.

The driving current supply structure may include an inner bus wire 77.The inner bus wire 77 may include first regions 77 a extending in asecond direction that is substantially perpendicular to the firstdirection, and second regions 77 b that extend in the first direction.

The first regions 77 a and the second regions 77 b may be alternatelyconnected to each other such that at least one side of the inner buswire 77 has a substantially stepped shape. The first region 77 a may beconnected to the first wire 41 f. According to a non-limiting exampleembodiment, the first region 77 a and the first wire 41 f may beintegrally formed as one-piece. The inner bus wire 77 may include atleast two first regions 77 a having substantially different lengths tobe connected to substantially different numbers of first wires 41 f. Theinner bus wire 77 may include at least two second regions 77 b havingsubstantially different lengths.

At least one side of the inner bus wire 77 may have the substantiallystepped shape. Thus, the inner bus wire 77 may efficiently becomesubstantially closer to an outer edge PCA-1 of the pixel circuit areahaving a matrix format formed by a plurality of quadrangular-shapedpixel circuit zones PCZ.

According to a non-limiting example embodiment, when the outer edge ofan emission zone is not located inside the outer edge of the pixelcircuit zone PCZ, the inner bus wire 77 may partially overlap at leastone of the emission zone and the lower electrode 20 while the inner buswire 77 is located outside the outer edge PCA-1 of the pixel circuitarea. Thus, the area of the emission area 100 may be expanded whiledisposing the inner bus wire 77 as close as possible to the pixelcircuit area.

FIG. 10 illustrates the driving current supply structure having an innerbus wire according to a non-limiting example embodiment.

The driving current supply structure according to the presentnon-limiting example embodiment may be substantially similar to thedriving current supply structure of FIG. 9, except that the drivingcurrent supply structure of the present non-limiting example embodimentmay further include second wires 41 g.

Referring to FIG. 10, a second wire 41 g may extend in the seconddirection. The second wire 41 g may cross the pixel circuit zone PCZ.The second wire 41 g may be located on a layer that is substantiallydifferent from a layer on which the first wire 41 f is located, and maybe connected to the first wire 41 f through a contact c4.

The second wire 41 g may be used as an electrode included in a capacitorof each pixel circuit. For example, the second wire 41 g may be commonlyused as an electrode of a capacitor included in a first pixel circuitand an electrode of a capacitor included in a second pixel circuit thatis adjacent to the first pixel circuit. When the second wire 41 g isused as the electrode included in the capacitor of the pixel circuit,integration of the pixel circuit may be increased by avoiding formationof an additional electrode included in the capacitor of the pixelcircuit.

FIG. 11 illustrates the driving current supply structure having theinner bus wire according to a non-limiting example embodiment.

The driving current supply structure according to the presentnon-limiting example embodiment may be substantially similar to thedriving current supply structure of FIG. 10, except that a second wire41 g of the driving current supply structure of the present non-limitingexample embodiment may be connected to an inner bus wire 77.

Referring to FIG. 11, the second wire 41 g may be connected to thesecond region 77 b of the inner bus wire 77 through a contact c5. Whenthe inner bus wire 77 includes at least two second regions 77 b havingsubstantially different lengths, numbers of second wires 41 g connectedto the second regions 77 b may be substantially different. The inner buswire 77 may be connected not only with the first wires 41 f but alsowith the second wires 41 g. Thus, current may be more evenly transmittedthroughout the entire driving current supply structure.

FIG. 12 shows first and second touch electrodes included in a touchpanel that is formed on the encapsulation structure 31 in the area A ofFIG. 1, according to a non-limiting example embodiment.

Referring to FIG. 12, a first touch electrode 51 may extend in a firstdirection, and includes a first sensing electrode 51 a and a firstbridge electrode 51 b. The area of the first sensing electrode 51 a maybe substantially wider than that of the first bridge electrode 51 b. Asecond touch electrode 52 may extend in a second direction that crossesthe first direction, and may include a second sensing electrode 52 a anda second bridge electrode 52 b. The area of the second sensing electrode52 a may be substantially wider than that of the second bridge electrode52 b. The first bridge electrode 51 b and the second bridge electrode 52b may be provided on substantially different layers and cross eachother.

The first touch electrode 51 may be a common pattern layer and have ashape from which a portion corresponding to a light transmitting region210 is removed. The first touch electrode 51 may be divided into two bythe light transmitting region 210, and one side of a first sensingelectrode 51 a-1 may have a notch 51 c corresponding to the lighttransmitting region 210. The area of the first sensing electrode 51 a-1,adjacent to the light transmitting region 210, may be substantiallysmaller than that of a first sensing electrode 51 a-2 that is locatedfarther away from the light transmitting region 210 than first sensingelectrode 51 a-1. Sensing at the periphery of the light transmittingregion 210 may be precisely performed by disposing the first sensingelectrode 51 a-1 having a substantially smaller area substantiallycloser to the light transmitting region 210. The second touch electrode52 may be a common pattern layer and may also be divided into two by thelight transmitting region 210, and one side of a second sensingelectrode 52 a-1 may have a notch 52 c corresponding to the lighttransmitting region 210. The area of the second sensing electrode 52a-1, adjacent to the light transmitting region 210, may be substantiallysmaller than that of a second sensing electrode 52 a-2 that is locatedfarther away from the light transmitting region 210 than second sensingelectrode 52 a-1. Sensing at the periphery of the light transmittingregion 210 may be precisely performed by disposing the second sensingelectrode 52 a-1 having a substantially smaller area substantiallycloser to the light transmitting region 210.

A dummy electrode 53 may be further provided between the first sensingelectrode 51 a and the second sensing electrode 52 a. The dummyelectrode 53 may prevent an image from being relatively brightenedbetween the first sensing electrode 51 a and the second sensingelectrode 52 a so that the image may have substantially even brightnessthroughout the entire electroluminescent device. The first sensingelectrode 51 a, the second sensing electrode 52 a, and the dummyelectrode 53 may have substantially the same or similar lighttransmittance. The first sensing electrode 51 a, the second sensingelectrode 52 a, and the dummy electrode 53 may be located onsubstantially the same layer. A dummy electrode 53 a may have a shapefrom which a portion corresponding to the light transmitting region 210is removed. An area of the dummy electrode 53 a, adjacent to the lighttransmitting region 210, may be substantially smaller than an area of adummy electrode 53 b which is not adjacent to the light transmittingregion 210. The dummy electrode 53 a having a substantially smaller areamay be located substantially closer to the light transmitting region 210so that brightness uniformity is enhanced at the periphery of the lighttransmitting region 210.

According to a non-limiting example embodiment, the first sensingelectrode 51 a-2 and the second sensing electrode 52 a-2 may havesubstantially the same area. In another implementation, the area of thefirst sensing electrode 51 a-2 and the area of the second sensingelectrode 52 a-2 may be substantially different from each other. Forexample, when the first direction in which the first touch electrode 51extends is a short side direction of the electroluminescent device andthe second direction in which the second touch electrode 52 extends is along side direction of the electroluminescent device, the area of thefirst sensing electrode 51 a-2 may be substantially greater than that ofthe second sensing electrode 52 a-2. This may increase of sensingsensitivity with respect to surrounding noise by making the entire areaof the first touch electrode 51 and the entire area of the second touchelectrode 52 substantially equal to each other.

According to a non-limiting example embodiment, the first sensingelectrode 51 a, the second sensing electrode 52 a, and the dummyelectrode 53 may include a transparent conductive material such as anindium tin oxide. The first sensing electrode 51 a and the secondsensing electrode 52 a may have a structure in which a plurality ofmetal lines is connected to each other in a mesh format.

FIG. 13 shows a bypass structure of a touch electrode according to anon-limiting example embodiment.

Referring to FIG. 13, first and second touch electrode 51 and 52 maycross each other at a cross region x, and the cross region x may overlapan inner buffer area 202. The first touch electrode 51 may include afirst connection member 51 d that bypasses or circumvents the lighttransmitting region 210, and the second touch electrode 52 may include asecond connection member 52 d that bypasses the light transmittingregion 210. The first connection member 51 d and the second connectionmember 52 d may be located on substantially the same layer, while notbeing overlapped with each other. In another implementation, the firstconnection member 51 d and the second connection member 52 d may belocated on substantially different layers, while not being overlappedwith each other. At least one of at least a part of the first connectionmember 51 d and at least a part of the second connection member 52 d mayoverlap the inner buffer area 202 that surrounds the light transmittingregion 210.

FIG. 14 shows first and second touch electrodes included in a touchpanel formed on the encapsulation structure in the area A of FIG. 1,according to a non-limiting example embodiment.

Referring to FIG. 14, a first touch electrode 51 is not divided by thelight transmitting region 210, but a first sensing electrode 51 a-3includes a hole h2 that corresponds to the light transmitting region210. An area of the first sensing electrode 51 a-3 where the hole 112 isformed may be substantially smaller than an area of the first sensingelectrode 51 a where the hole h2 is not formed.

FIG. 15 shows first and second touch electrodes included in a touchpanel formed on the encapsulation structure in the area A of FIG. 1,according to a non-limiting example embodiment.

Referring to FIG. 15, a center CE of a light transmitting region 210 maybe located in the light transmitting region 210 between first to fourthcrossing portions X1, X2, X3, and X4 that are adjacent to each otherbetween two adjacent first touch electrodes 51 and two adjacent secondtouch electrodes 52. First sensing electrodes 51 a-4 that are adjacentto a light transmitting region 210 and second sensing electrodes 52 a-4that are adjacent to the light transmitting region 210 may respectivelyinclude notches. The first touch electrode 51 and the second touchelectrodes 52 may not be divided by the light transmitting region 210.

FIG. 16 shows a touch electrode included in a touch panel formed on theencapsulation structure in the area A of FIG. 1, according to anon-limiting example embodiment.

Referring to FIG. 16, the touch electrode 54 may include sensingelectrodes 54 a and touch wires 54 b. An area of a sensing electrode 54a-1 that is adjacent to the light transmitting region 210 among thesensing electrodes 54 a may be substantially smaller than an area of asensing electrode 54 a-2 that is not located adjacent to the lighttransmitting region 210.

FIG. 17 shows an upper touch electrode included in a touch panel formedon the encapsulation structure of FIG. 1, according to a non-limitingexample embodiment.

Referring to FIG. 17, upper touch electrodes 60 and upper dummyelectrodes 63 may be located on an upper surface of an insulation layer50. As the insulation layer 50, the polarization film 39 shown in FIG. 3may be used. The upper touch electrodes 60 may extend in a firstdirection and may have a first width. A plurality of upper dummyelectrodes 63 may be located between the upper touch electrodes 60. Ahole h3 that corresponds to the light transmitting region 210 may beformed in the insulation layer 50. In addition, the upper touchelectrodes 60 and the upper dummy electrodes 63 may not be formed at theperiphery of the hole h3. The hole h3 may be omitted.

FIG. 18 shows lower touch electrodes included in the touch panel of FIG.17.

Referring to FIG. 18, lower touch electrodes 80 and lower dummyelectrodes 83 may be located on a bottom surface of the insulation layer50. The lower touch electrode 80 may extend in a second direction thatis substantially perpendicular to the first direction in which the uppertouch electrode 60 extends, and may have a second width. Here, thesecond width of the lower touch electrode 80 may be substantially thesame as the first width of the upper touch electrode 60. In anotherimplementation, the second width of the lower touch electrode 80 may besubstantially different from the first width of the upper touchelectrode 60. For example, when the first direction in which the uppertouch electrode 60 extends is a short side direction and the seconddirection in which the lower touch electrode 80 extends is a long sidedirection, the first width of the upper touch electrode 60 may besubstantially greater than the second width of the lower touch electrode80. This may increase sensing sensitivity with respect to surroundingnoise by making the entire area of the upper touch electrode 60 and theentire area of the lower touch electrode 80 substantially equal to eachother.

A plurality of lower dummy electrodes 83 may be located between thelower touch electrodes 80. The lower touch electrodes 80 and the lowerdummy electrodes 83 may not be formed at the periphery of the hole h3.

FIG. 19 shows a touch panel to which the upper touch electrode shown inFIG. 17 and the lower touch electrode of FIG. 18 are combined.

Referring to FIG. 19, the upper touch electrodes 60 may include an uppervertical sensing electrode 61 and an upper horizontal sensing electrode62. The lower touch electrodes 80 may include a lower vertical sensingelectrode 81 and a lower horizontal sensing electrode 82.

The upper vertical sensing electrode 61 and the lower vertical sensingelectrode 81 may form a vertical sensing area 70 while being overlappedwith each other. A first capacitor may be formed in a vertical directionin the vertical sensing area 70. A second capacitor may be formed in ahorizontal direction between the upper horizontal sensing electrode 62and the lower horizontal sensing electrode 82. A touch may be sensed bymeasuring a capacitance variation amount of the first capacitor and/orthe second capacitor.

The upper touch electrode 60 a may have an end portion that is adjacentto the hole h3, and the end portion may include a notch 64 a. The uppertouch electrode 60 b may have a side portion that is adjacent to thehole h3, and the side portion may include a notch 64 b. The lower touchelectrode 80 a may include an end portion that is adjacent to the holeh3, and the end portion may include a notch 84 a.

An area of an upper dummy electrode 63 a, adjacent to the hole h3, maybe substantially smaller than an area of an upper dummy electrode 63 b,not being adjacent to the hole 113. An area of a lower dummy electrode83 a, adjacent to the hole h3, may be substantially smaller than an areaof a lower dummy electrode 83 b, not being adjacent to the hole h3. Anarea of a vertical sensing area 70 a, adjacent to the hole h3 may besubstantially smaller than an area of a vertical sensing area 70 b, notbeing adjacent to the hole h3. An area of a lower horizontal sensingarea 82 a, adjacent to the hole h3 may be substantially smaller than anarea of a lower horizontal sensing electrode 82 b, not being adjacent tothe hole h3. An area of an upper horizontal sensing electrode 62 a,adjacent to the hole h3 may be substantially smaller than an area of anupper horizontal sensing electrode 62 b, not being adjacent to the holeh3.

The upper touch electrode 60 a may have a single vertical sensing area70 e up to the hole h3, but the upper touch electrode 60 b may have twovertical sense areas 70 c and 70 d up to the hole h3. However, FIG. 19is a partial diagram, and, thus, does not imply that the upper touchelectrode 60 a has only a single vertical sensing area 70 e up to thehole h3 and the upper touch electrode 60 b has only two vertical senseareas 70 c and 70 d up to the hole g3.

FIG. 20 shows a touch panel formed on the encapsulation structure ofFIG. 1, according to a non-limiting example embodiment.

Referring to FIG. 20, two upper dummy electrodes 63 and two lower dummyelectrodes 83 may be located to overlap each other in a first area A1that is located adjacent to a hole h3 and surrounded by an upper touchelectrode 60 and a lower touch electrode 80. Thus, total four dummyelectrodes may be located in the first area A1.

In an implementation, four upper dummy electrodes 63 and four lowerdummy electrodes 83 may be located to overlap each other in a secondarea A2 that is not adjacent to the hole h3 and surrounded by the uppertouch electrode 60 and the lower touch electrode 80. Accordingly, atotal of 8 dummy electrodes may be located in the second area A2.

The bypass structure shown in FIG. 13 may be employed in the touchpanels of FIG. 19 and FIG. 20.

The touch panels described in FIG. 12 to FIG. 20 may be employed in anelectroluminescent device having a light transmitting region, which willbe described in FIG. 22, FIG. 28, FIG. 30, FIG. 31. FIG. 36, and FIG.38, and an electroluminescent device having a notch, which will bedescribed in FIG. 41. FIG. 45, and FIG. 52.

FIG. 21 is a cross-sectional view taken along the line I-I′ in FIG. 1,according to a non-limiting example embodiment.

Differing from FIG. 2, referring to FIG. 21, a hole transporting layer22 a, an electron transporting layer 22 c, an upper electrode 23, and apassivation layer 24 may be common pattern layers, but each may have ashape in which a portion corresponding to a light transmitting region210 is not removed. This is because, material properties of the holetransporting layer 22 a, the electron transporting layer 22 c, the upperelectrode 23, and the passivation layer 24 may be changed during aremoval process for removing a portion of the common pattern layercorresponding the light transmitting region, or designing a mask forevaporation deposition process for forming a common pattern layer havinga hole may be difficult. In another implementation, at least one of thehole transporting layer 22 a, the electron transporting layer 22 c, theupper electrode 23, and the passivation layer 24 may have a shape fromwhich a portion corresponding to the light transmitting region 210 isremoved. When the upper electrode 23 includes a reflective metal,transmittance may be relatively decreased. Thus, a portion of the upperelectrode 23, corresponding to the light transmitting region 210 may beremoved when the upper electrode 23 includes the reflective material.The hole transporting layer 22 a, the electron transporting layer 22 c,and the passivation layer 24 having an organic material may less reducetransmittance. Thus, portions of the hole transporting layer 22 a, theelectron transporting layer 22 c, and the passivation layer 24corresponding to the light transmitting region 210 may not be removed.In the present non-limiting example embodiment, the light transmittingregion 210 may have a non-hole structure.

FIG. 22 is a top plan view of an electroluminescent device according toa non-limiting example embodiment. FIG. 23 is a cross-sectional viewtaken along the line I-I′ in FIG. 22, according to a non-limitingexample embodiment.

Referring to FIG. 22 and FIG. 23, an electroluminescent device mayinclude an emission area 100 and a non-emission area 200. Thenon-emission area 200 may include an outer non-emission area 200 a andan inner non-emission area 200 b. The outer non-emission area 200 a mayinclude an outer inorganic surface portion 221 that surrounds theemission area 100, and an outer buffer area 201 that is located betweenthe emission area 100 and the outer inorganic surface portion 221. Theinner non-emission area 200 b may include a light transmitting region210 that is surrounded by the emission area 100 and is used as a window,and an inner buffer layer 202 that is located between the emission area100 and an inner inorganic surface portion 222.

The lower structure 25 may include the emission area 100 and thenon-emission area 200. The non-emission area 200 may include an outernon-emission area 200 a and an inner non-emission area 200 b. The outernon-emission area 200 a may include an outer inorganic surface portion220 that surrounds the emission area 100, and an outer buffer area 201that is located between the emission area 100 and the outer inorganicsurface portion 220. The inner non-emission area 200 b may include thelight transmitting region 210 that is surrounded by the emission area100 and is used as a window, and an inner buffer area 202 that islocated between the emission area 100 and the light transmitting region210. Here, the inorganic surface portion implies a part of the entireinorganic surface or the entity of the inorganic surface.

The light transmitting region 210 may include a hole h4 into which anoptical member 10 is inserted. A plurality of optical members 10 may beinserted into the hole h4. Other spaces of the hole h4, remaining afterthe insertion of the optical members 10, may be filled with a fillerthat may include, for example, a hygroscopic or anti-moisture permeablematerial. Such a filler may be provided to block moisture or oxygen thatmay be permeated into the electroluminescent device and fix the opticalmembers 10. Rather than the optical member 10, a non-optical member suchas a speaker may be inserted into the hole h4. The entire area of thelight transmitting region 210 may be the hole h4. In anotherimplementation, a part of the light transmitting region 210 may be thehole h4. Moisture and oxygen that may be permeated through a sideportion of the emission area 100 from the hole h4 may be blocked by aninorganic-inorganic contact line formed by direct contact between theinner inorganic surface portion 222 and the inorganic lower surface 31 dof the encapsulation structure 31. The inorganic-inorganic contact linemay have a closed loop shape. In an implementation, only an inorganicmaterial may be formed between the inorganic layer structure such as afirst gate insulation layer 13, a second gate insulation layer 15, andan interlayer insulation layer 17 and the inner inorganic surfaceportion 222.

When the light transmitting region 210 completely surrounded by theemission area 100 has the hole h4 into which the optical member 10 isinserted, it may be advantageous for the encapsulation structure 31 tobe a multilayer having more flexibility than a rigid encapsulationstructure including an inorganic sealant and an inorganic glasssubstrate. This is because, when the encapsulation structure 31 is therigid encapsulation structure, the emission area 100 may be easilydamaged during processes for forming the inorganic sealant at theperiphery of the light transmitting region 210 and, then, irradiatinglaser beams to the inorganic sealant, or processes for removing an areaof the inorganic glass substrate, corresponding to the lighttransmitting region 210, using laser beams and the like because thelight transmitting region 210 is completely surrounded by the emissionarea 100. According to a non-limiting example embodiment, theelectroluminescent device in FIG. 22 may include a rigid encapsulationstructure having an inorganic sealant and an inorganic glass substrateto the extent that a damage to the emission area 100 is not excessive.

A surface of at least one of at least a part of the first wire 41 a andat least a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7, may be included in theinner inorganic surface portion 222 shown in FIG. 22. In anotherimplementation, a surface of at least one of at least a part of thefirst wire 41 a and at least a part of the second wire 41 b, and atleast a part of the connection member 43 shown in FIG. 4 to FIG. 7, maybe located under the inner inorganic surface portion 222 shown in FIG.22.

The driving current supply structures shown in FIG. 8 to FIG. 11 may beemployed to the electroluminescent device shown in FIG. 22 and FIG. 23.According to a non-limiting example embodiment, the inner bus wiresshown in FIG. 9 to FIG. 11 may overlap the inner inorganic surfaceportion 222. According to a non-limiting example embodiment, the innerbus wires 77 shown in FIG. 9 to FIG. 11 may be included in the innerinorganic surface portion 222 or may be located under the innerinorganic surface portion 222.

The touch panels shown in FIG. 12 to FIG. 20 may be employed to theelectroluminescent device shown in FIG. 22 and FIG. 23. According to anon-limiting example embodiment, the first sensing electrode 51 a-1 andthe dummy electrode 53 a of FIG. 12, the first sensing electrode 51 a-1of FIG. 14, the first and second sensing electrodes 51 a-4 and 52 a-4 ofFIG. 15, the sensing electrode 54 a-1 of FIG. 16, and the upper dummyelectrode 63 a, the lower dummy electrode 83 a, the vertical sensingarea 70 a, the lower horizontal sensing electrode 82 a, and the upperhorizontal sensing electrode 62 a of FIG. 19 may not be overlapped withthe inner inorganic surface portion 222.

FIG. 24 is a cross-sectional view of an area C and the area D in FIG. 23according to a non-limiting example embodiment.

Referring to the area C in FIG. 24, at least a portion of a side face 25f of the lower structure 25 and at least a portion of a side face 31 fof the encapsulation structure 31 may be located on substantially thesame plane. The lower structure may include a first outer inorganicsurface portion 221 b-1 that is located in the outermost region andsurrounds the emission area 100, an outer organic surface portion 221c-1 that is connected to the first outer inorganic surface portion 221b-1 and corresponds to a surface of an outer organic dam 71, and asecond outer inorganic surface portion 221 d-1 that is connected to theouter organic surface portion 221 c-1 and surrounds the emission area100. The first outer inorganic surface portion 221 b-1 and the secondouter inorganic surface portion 221 d-1 may be completely separated fromeach other or partially separated from each other by the outer organicsurface portion 221 c-1. The entire area of the first outer inorganicsurface portion 221 b-1 and the entire area of the second outerinorganic surface portion 221 d-1 may make a direct contact with aninorganic lower surface 31 d of the encapsulation structure.

Referring back to the area C in FIG. 24, an outer lower connection wire83-1 that substantially surrounds the emission area 100 may be locatedon the interlayer insulation layer 17. The outer lower connection wire83-1 may be formed by substantially the same process as that of asource/drain electrode 18. An outer upper connection wire 81-1 may belocated on a planarization layer 19, and may make a contact with anupper electrode 23 and the outer lower connection wire 83-1. The outerupper connection wire 81-1 may be formed by substantially the sameprocess as that of a lower electrode 20. The outer lower connection wire83-1 may have a shape that substantially surrounds the emission area100. When the upper electrode 23 is a cathode, electrons may besequentially transmitted to the upper electrode 23 through the outerlower connection wire 83-1 and the outer upper connection wire 81-1. Theouter lower connection wire 83-1 may be electrically connected to apower source that is provided outside the electroluminescent device.According to a non-limiting example embodiment, the outer lowerconnection wire 83-1 may be omitted. According to a non-limiting exampleembodiment, the outer upper connection wire 81-1 may not be formed andthe upper electrode 23 may make a contact with the outer lowerconnection wire 83-1.

Referring to the area D in FIG. 24, the side face 31 f of theencapsulation structure 31 may be located further inside than the sideface 25 f of the lower structure 25. When a process for forming the sideface 25 f of the lower structure 25 and a process for forming the sideface 31 f of the encapsulation structure 31 are substantially differentfrom each other, the side face 31 f of the encapsulation structure 31may be located further inside than the side face 25 f of the lowerstructure 25. For example, when a first inorganic layer 31 a and asecond inorganic layer 31 c of the encapsulation structure 31 aredeposited using substantially the same deposition open mask, a side faceof the first inorganic layer 31 a and a side face of the secondinorganic layer 31 c may be located on the substantially the same planeand, at the same time, the side face 31 f of the encapsulation structure31 may be located further inside than the side face 25 f of the lowerstructure 25. In this case, the side face 31 f of the encapsulationstructure 31 may be formed without performing an additional etchingprocess, and damage to the electroluminescent unit, which may occurduring a general etching process that is performed after forming theelectroluminescent unit, may be reduced.

Referring back to the area D in FIG. 24, the lower structure 25 mayinclude an open inner inorganic surface portion 222 a-1 that is locatedin the outermost region and does not make a contact with the inorganiclower surface 31 d of the encapsulation structure 31, a first innerinorganic surface portion 222 b-1 that is connected to the open innerinorganic surface portion 222 a-1 and surrounds the hole h4, an innerorganic surface portion 222 c-1 that is connected to the first innerinorganic surface portion 222 b-1 and corresponds to a surface of theinner organic dam 72, and a second inner inorganic surface portion 222d-1 that is connected to the inner organic surface potion 222 c-1 andsurrounds the hole h4. The first inner inorganic surface portion 222 b-1and the second inner inorganic surface portion 222 d-1 may be completelyseparated or partially separated from each other by the inner organicsurface portion 222 c-1. The entire area of the first inorganic surfaceportion 222 b-1 and the entire area of the second inner inorganicsurface portion 222 d-1 may make a direct contact with the inorganiclower surface 31 d of the encapsulation structure 31. The open innerinorganic surface portion 222 a-1 may be opened with respect to theencapsulation structure 31. For example, the open inner inorganicsurface portion 222 a-1 may not make a contact with the inorganic lowersurface 31 d of the encapsulation structure 31, but may be covered byanother member after the encapsulation structure 31 is formed. Aconnection member 43 d may be located under the first inner inorganicsurface portion 222 b-1. A connection member 43 e may be included in thefirst inner inorganic surface portion 222 b-1. A connection member 43 fmay be located under the open inner inorganic surface portion 222 a-1.

Referring back to the area D in FIG. 24, an inner lower connection wire84-1 that substantially surrounds the light transmitting region 210 maybe located on the interlayer insulation layer 17. The inner lowerconnection wire 84-1 may be formed by substantially the same process asthat of the source/drain electrode 18. An inner upper connection wire82-1 may be located on a planarization layer 19, and may make a contactwith the upper electrode 23 and the inner lower connection wire 84-1.The inner upper connection wire 82-1 may be formed by substantially thesame process as that of the lower electrode 20. The inner lowerconnection wire 84-1 may have a shape that substantially surrounds theemission area 100. According to a non-limiting example embodiment, theinner lower connection wire 84-1 may not be electrically connected to apower source that is located outside the electroluminescent device.According to a non-limiting example embodiment, the inner lowerconnection wire 84-1 may be omitted. According to a non-limiting exampleembodiment, the inner upper connection wire 82-1 may be omitted and theupper electrode 23 may make a contact with the inner lower connectionwire 84-1. According to a non-limiting example embodiment, the innerupper connection wire 82-1 and the inner lower connection wire 84-1 maybe omitted.

FIG. 25 is a cross-sectional view of the area C and the area D in FIG.23 according to a non-limiting example embodiment.

Referring to the area C in FIG. 25, at least a portion of the side face25 f of the lower structure 25 and at least a portion of the side face31 f of the encapsulation structure may be located on substantially thesame plane. The lower structure 25 may include a first outer inorganicsurface portion 221 b-2 that is located in the outermost region andsurrounds the emission area 100, an outer organic surface portion 221c-2 that is connected to the first outer inorganic surface portion 221b-2 and corresponds to a surface of the outer organic dam 71, and asecond outer inorganic surface portion 221 d-2 that is connected to theouter organic surface portion 221 c-2 and surrounds the emission area100.

Referring to the area D in FIG. 25, at least a portion of the side face25 f of the lower structure 25 and at least a portion of the side face31 f of the encapsulation structure 31 may be located on substantiallythe same plane. The lower structure may include a first inner inorganicsurface 222 b-2 that is located in the outermost region and surroundsthe hole h4, an inner organic surface portion 222 c-2 that is connectedto the first inner inorganic surface portion 222 b-2 and corresponds toa surface of the inner organic dam 72, and a second inner inorganicsurface portion 222 d-2 that is connected to the inner organic surfaceportion 222 c-2 and surrounds the hole h4. The connection member 43 dmay be located under the first inner inorganic surface portion 222 b-2.The connection member 43 e may be included in the first inner inorganicsurface portion 222 b-2.

FIG. 26 is a cross-sectional view of the area C and the area D in FIG.23 according to a non-limiting example embodiment.

Referring to the area C in FIG. 26, the side face 31 f of anencapsulation structure 31 may be located further inside than the sideface 25 f of the lower structure 25. The lower structure 25 may includean opened outer inorganic surface portion 221 a-3 that is located in theoutermost region and does not make a contact with the inorganic lowersurface 31 d of the encapsulation structure 31, a first outer inorganicsurface portion 221 b-3 that is connected to the opened outer inorganicsurface portion 221 a-3 and surrounds the emission area 100, a firstorganic surface portion 221 c-3 that is connected to the first outerinorganic surface portion 221 b-3 and corresponds to a surface of theouter organic dam 71, and a second outer inorganic surface portion 221d-3 that is connected to the outer organic surface portion 221 c-1 andsurrounds the emission area 100.

Referring to the area D in FIG. 26, the side face 31 f of theencapsulation structure 31 may be located further inside than the sideface 25 f of the lower structure 25. The lower structure 25 may includean open inner inorganic surface portion 222 a-3 that is located in theoutermost region and does not make a contact with the inorganic lowersurface 31 d, a first inner inorganic surface portion 222 b-3 that isconnected to the open inner inorganic surface portion 222 a-3 andsurrounds the hole h4, a second organic surface portion 222 c-3 that isconnected to the first inner inorganic surface portion 222 b-3 andcorresponds to a surface of the inner organic dam 72, and a second innerinorganic surface portion 222 d-3 that is connected to the secondorganic surface portion 222 c-3 and surrounds the hole h4. Theconnection member 43 d may be located under the first inner inorganicsurface portion 222 b-3. The connection member 43 e may be included inthe first inner inorganic surface portion 222 b-3. The connection member43 f may be located under the open inner inorganic surface portion 222a-3.

FIG. 27 is a cross-sectional view of the area C and the area D in FIG.23 according to a non-limiting example embodiment.

Referring to the area C in FIG. 27, the side face 31 f of theencapsulation structure 31 may be located further inside than the sideface 25 f of the lower structure 25. The lower structure 25 may includean opened outer inorganic surface portion 221 a-4 that is located in theoutermost region and does not make a contact with the inorganic lowersurface 31 d of the encapsulation structure 31, a first outer inorganicsurface portion 221 b-4 that is connected to the opened outer inorganicsurface portion 221 a-4 and surrounds the emission area 100, an outerorganic surface portion 221 c-4 that is connected to the first outerinorganic surface portion 221 b-4 and corresponds to a surface of theouter organic dam 71, and a second outer inorganic surface portion 221d-4 that is connected to the outer organic surface portion 221 c-4 andsurrounds the emission area 100.

Referring to the area D in FIG. 27, at least a portion of the side face25 f of the lower structure 25 and at least a portion of the side face31 f of the encapsulation structure 31 may be located on substantiallythe same plane. The lower structure 25 may include a first innerinorganic surface portion 222 b-4 that is located in the outermostregion and surrounds the hole h4, an inner organic surface portion 222c-4 that is connected to the first inner inorganic surface portion 222b-4 and corresponds to a surface of the inner organic dam 72, and asecond inner inorganic surface portion 222 d-4 that is connected to theinner organic surface portion 222 c-4 and surrounds the hole h4. Theconnection member 43 d may be located under the first inner inorganicsurface portion 222 b-4. The connection member 43 e may be included inthe first inner inorganic surface portion 222 b-4.

FIG. 28 is a top plan view of an electroluminescent device according toa non-limiting example embodiment. FIG. 29 is a cross-sectional viewtaken along the line in FIG. 23, according to a non-limiting exampleembodiment.

Referring to FIG. 28 and FIG. 29, an electroluminescent device mayinclude an emission area 100 and a non-emission area 200. Thenon-emission area 200 may include an outer non-emission area 200 a andan inner non-emission area 200 b.

The outer non-emission area 200 a may include an outer inorganic surfaceportion 221 that surrounds the emission area 100 and an outer bufferarea 201 that is located between the emission area 100 and the outerinorganic surface portion 221. The inner non-emission area 200 b mayinclude a light transmitting region 210 that is surrounded by theemission area 100 and is used as a window, a first inner inorganicsurface portion 222 b that surrounds the light transmitting region 210,an inner organic surface portion 222 c that surrounds the first innerinorganic surface portion 222 b, a second inner inorganic surfaceportion 222 d that surrounds the inner organic surface portion 222 c,and an inner buffer area 202 that is located between the second innerinorganic surface portion 222 d and the emission area 100.

The light transmitting region 210 may have a hole h5. An open innerinorganic surface portion 222 a that surrounds the hole h5 may belocated in the outermost region of the inner buffer area 202. The openinner inorganic surface portion 222 a may not be covered by anencapsulation structure 31. The first inner inorganic surface portion222 b may make a direct contact with the encapsulation structure 31 andmay have a closed loop shape. The second inner inorganic surface portion222 d may also have a closed loop shape while making a direct contactwith the encapsulation structure 31.

The lower structure 25 may include an inner organic dam 72, and asurface of the inner organic dam 72 may correspond to the inner organicsurface portion 222 c of the lower structure 25. Here, the first innerinorganic surface portion 222 b and the second inner inorganic surfaceportion 222 d may not be connected to each other, as shown in thedrawing, but this is not restrictive. The first inner inorganic surfaceportion 222 b and the second inner inorganic surface portion 222 d maybe connected to each other in at least one region.

A side face 25 f of the lower structure 25 may be located on a planethat is different from a plane on which a side face 31 f of theencapsulation structure 31 is located, and the side face 31 f of theencapsulation structure 31 may be located further inside than the sideface 25 f of the lower structure 25. In such a structure, the emissionarea 100 may be relatively narrowed due to a distance between the sideface 25 f of the lower structure 25 and the side face 31 f of theencapsulation structure 31, and, therefore, at least a part of aconnection member 43 a may be located under the open inner inorganicsurface portion 222 a, at least a part of a connection member 43 b-2 maybe included in the first inner inorganic surface portion 222 b, or atleast a part of a connection member 43 b-1 may be located under thefirst inner inorganic surface portion 222 b.

A surface of at least one of at least a part of the first wire 41 a, atleast a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7 may be included in atleast one of the first and second inner inorganic surface portions 222 band 222 d shown in FIG. 28 and FIG. 29. In another implementation, asurface of at least one of at least a part of the first wire 41 a, atleast a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7 may be located under atleast one of the first and second inner inorganic surface portions 222 band 222 d shown in FIG. 28 and FIG. 29.

The driving current supply structures shown in FIG. 8 to FIG. 11 may beemployed to the electroluminescent device shown in FIG. 28 and FIG. 29.According to a non-limiting example embodiment, the inner bus wire 77shown in FIG. 9 to FIG. 11 may overlap at least one of the first andsecond inner inorganic surface portions 222 b and 222 d. According to anon-limiting example embodiment, the inner bus wire 77 shown in FIG. 9to FIG. 11 may be included in at least one of the first and second innerinorganic surface portions 222 b and 222 d or may be located under atleast one of the first and second inner inorganic surface portions 222 band 222 d.

The touch panels shown in FIG. 12 to FIG. 20 may be employed to theelectroluminescent device shown in FIG. 28 and FIG. 29. According to anon-limiting example embodiment, the first sensing electrode 51 a-1 andthe dummy electrode 53 a of FIG. 12, the first sensing electrode 51 a-1of FIG. 14, the first and second sensing electrodes 51 a-4 and 52 a-4 ofFIG. 15, the sensing electrode 54 a-1 of FIG. 16, the upper dummyelectrode 63 a, the lower dummy electrode 83 a, the vertical sensingarea 70 a, the lower horizontal sensing electrode 82 a, and the upperhorizontal sensing electrode 62 a of FIG. 19 may not overlap at leastone of the first and second inner inorganic surface portions 222 b and222 d.

FIG. 30 is a top plan view of an electroluminescent device according toa non-limiting example embodiment.

Referring to FIG. 30, a lower structure 25 may include an emission area300 and an outer non-emission area 400. The outer non-emission area 400may include an outer inorganic surface portion 420 that surrounds theemission area 300, an outer buffer layer 430 that is located between theemission area 300 and the outer inorganic surface portion 420, and alight transmitting region 410 that is surrounded by the outer bufferarea 430 and partially surrounded by the emission area 300. In thepresent non-limiting example embodiment, the light transmitting region410 may have a non-hole structure.

FIG. 31 is a top plan view of an electroluminescent device according toa non-limiting example embodiment.

Referring to FIG. 31, a lower structure 25 may include an emission area500 and an outer non-emission area 600. The outer non-emission area 600may include an outer inorganic surface portion 620 that surrounds theemission area 500, an outer buffer area 630 that is located between theemission area 500 and the outer inorganic surface portion 620, a lighttransmitting region 610 that is surrounded by the outer inorganicsurface portion 620 and partially surrounded by the emission area 500,and an organic surface island 6 that is surrounded by the outerinorganic surface portion 620. The light transmitting region 610 mayinclude a hole.

The organic surface island 6 may be located inside the outer inorganicsurface portion 620. The organic surface island 6 may be a surface of aspacer that neighbors a mask during an evaporation process for formingan intermediate layer, but the usage of the organic surface island 6 isnot limited thereto. In another implementation, the organic surfaceisland 6 may be omitted.

A surface of at least one of at least a part of the first wire 41 a, atleast a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7 may be included in theouter inorganic surface portion 620 shown in FIG. 31. In anotherimplementation, a surface of at least one of at least a part of thefirst wire 41 a, at least a part of the second wire 41 b, and at least apart of the connection member 43 shown in FIG. 4 to FIG. 7 may belocated under the outer inorganic surface portion 620 shown in FIG. 31.

FIG. 32 shows a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment. For example, the driving current supplystructure may supply a driving current to a lower electrode 20.

The driving current supply structure may include a terminal wire 1, afirst outer bus wire 8, a first wire 2, a second wire 3, and a secondouter bus wire 9.

The terminal wire 1 may be located on a first side 25 a of the lowerstructure 25. A terminal pad (not shown) may be formed at an end of theterminal wire 1. A driving current supplied to the terminal pad may betransmitted to the first outer bus wire 8 along a first direction D1through the first terminal wire 1. A plurality of the terminal wires 1may be provided. The terminal wires 1 may overlap the outer non-emissionarea 600.

The first outer bus wire 8 may be connected to the terminal wires 1. Thefirst outer bus wire 8 may be located on the first side 25 a of thelower structure 25 while being adjacent to a first side 500 a of theemission area 500, and may extend in a horizontal direction HD in whichthe first side 25 a extends. The first outer bus wire 8 may overlap theouter non-emission area 600.

According to a non-limiting example embodiment, when a boundary of anemission zone is not located inside a boundary of a pixel circuit zone,the first outer bus wire 8 may at least partially overlap at least oneof the emission zone and the lower electrode 20 while being locatedoutside a boundary of the pixel circuit area so that the area of theemission area 300 shown in FIG. 30 or the area of the emission area 500shown in FIG. 31 may be efficiently widened while disposing the firstouter bus wire 8 as close to the pixel circuit area as possible.

A first end 2 e-1 of the first wire 2 may be connected to the firstouter bus wire 8, and may extend in a vertical direction VD that issubstantially perpendicular to the horizontal direction HD. A pluralityof the first wire 2 may be provided. The first wires 2 may overlap theemission area 500.

The second wire 3 may be connected to the first wires 2 through contactsc1, and may extend in the horizontal direction HD. A plurality of thesecond wires 3 may be provided. The second wires 3 may overlap theemission area 500.

The second outer bus wire 9 may be connected to a second end 2 e-2 thatis located substantially opposite to the first end 2 e-1. The secondouter bus wire 9 may be located on a second side 25 b of the lowerstructure 25 that is substantially opposite to the first side 25 a ofthe lower structure 25 such that the second outer bus wire 9 is adjacentto a second side 500 b of the emission area 500. The second outer buswire 9 may extend in the horizontal direction HD.

According to a non-limiting example embodiment, when a boundary of anemission zone is not located inside a boundary of a pixel circuit zone,the second outer bus wire 9 may at least partially overlap at least oneof the emission zone and the lower electrode 20 while being locatedoutside a boundary of the pixel circuit area so that the area of theemission area 300 shown in FIG. 30 or the area of the emission area 500shown in FIG. 31 may be efficiently widened while disposing the secondouter bus wire 9 as close to the pixel circuit area as possible.

The second outer bus wire 9 may include a first portion 9 a to which afirst group G1 having a plurality of first wires 2 is connected, and asecond portion 9 b to which a second group G2 having a plurality offirst wires 2 is connected. A third group G3 having a plurality of firstwires 2 may be located between the first group G1 and the second groupG2. The second end 2 e-2 of the first wires 2 included in the thirdgroup G3 may face the light transmitting region 610. The third group G3may be not connected to the second outer bus wire 9. Thus, a spatialmargin may be secured at the periphery of the light transmitting region610 such that the degrees of freedom in design may be enhanced whilereducing signal interference due to a plurality of wires.

The light transmitting region 610 may be formed substantially closer tothe second outer bus wire 9 than to the first outer bus wire 8 to whichthe terminal wires 1 are connected. In addition, the light transmittingregion 610 may be located at substantially the same distance from thefirst outer bus wire 8 to which the terminal wires 1 are connected andthe second outer bus wire 9. Thus, an initial driving current may beevenly supplied to the entire area of the first side 500 a of theemission area 500.

A distance from the transmitting region 610 to a terminal wire 1 a issubstantially the same as a distance from the transmitting region 610 toa terminal wire 1 b. Thus, the driving current may be prevented frombeing unevenly supplied within the driving current supply structure dueto the light transmitting region 610. According to a non-limitingexample embodiment, another terminal wire 1 c may be included inaddition to the terminal wire 1 a and the terminal wire 1 b. Theterminal wire 1 c may be omitted, and the light transmitting region 610may be formed on a central axis of the electroluminescent device,extending in the vertical direction VD.

According to a non-limiting example embodiment, the terminal wires 1 maybe connected to the second outer bus wire 9 that is substantially closerto the light transmitting region 610 than the first outer bus wire 8. Inthis case, the initial driving current may be supplied in a relativelyshort time along a second direction D2 to electroluminescent unitsadjacent to the light transmitting region 610. Accordingly, an imagequality failure due to a current supply delay that may occur due to thelight transmitting region 610 may be reduced at the periphery of thelight transmitting region 610.

According to a non-limiting example embodiment, the electroluminescentdevice may be formed on a polymer layer formed on a carrier glasssubstrate. Adherence between the carrier glass substrate and the polymerlayer may be weakened by laser beam irradiation and the like such thatthey may be detached from each other. In this case, the detachment mayoccur along the first direction from the first side 25 a of the lowerstructure 25, and, thus, the second side 25 b of the lower structure 25may be detached at the end. According to a non-limiting exampleembodiment, damage or erroneous detachment at the periphery of the lighttransmitting region 610, which may occur when the detachment occurs fromthe second side 25 b of the lower structure 25, which is the closest tothe light transmitting region 610, may be reduced. Such a detachmentmethod may be employed in the above-described electroluminescent deviceof FIG. 1, FIG. 22, and FIG. 28, or an electroluminescent device to bedescribed in FIG. 41, FIG. 45, and FIG. 52.

FIG. 33 shows a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

Referring to FIG. 33, the second outer bus wire 9 including the firstportion 9 a and the second portion 9 b shown in FIG. 32 is omitted.However, other circuit configurations may be designed in the portionwhere the second outer bus wire 9 is omitted, thereby increasing thedegrees of freedom in circuit design.

FIG. 34 shows a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

Referring to FIG. 34, the outer bus wire 9 shown in FIG. 32 may furtherinclude a third portion 9 c connected to a plurality of first wires 2included in a third group G3. The third portion 9 c may overlap theouter non-emission area 600, and may be located between the lighttransmitting region 610 and the emission area 500. The third portion 9 cmay include an extension portion 9 c-1 that extends in a verticaldirection VD. The extension portion 9 c-1 and a second wire 3 a may beconnected to each other through contacts c2 such that a current from theextension portion 9 c-1 may be quickly and directly supplied to thesecond wire 3 a. In another implementation, the second wire 3 a may notbe connected to the extension portion 9 c-1 such that the width of theextension portion 9 c-1 may be reduced.

Here, the first portion 9 a, the second portion 9 b, and the thirdportion 9 c may be integrally formed as one-piece. In anotherimplementation, the first portion 9 a and the second portion 9 b may beformed by substantially the same process, and the third portion 9 c maybe another layer connected to the first and second portions 9 a and 9 bthrough contacts.

When the terminal wires 1 are connected to the second outer bus wires 9located on the second side 25 b of the lower structure 25, at least oneof the terminal wires 1 may be connected to the third portion 9 c.

FIG. 35 shows a driving current supply structure included in theelectroluminescent device shown in FIG. 30 or FIG. 31, according to anon-limiting example embodiment.

Referring to FIG. 35, the third portion 9 c of the second outer bus wire9 may be spaced apart from the first portion 9 a and the second portion9 b. The third portion 9 c may be connected to the second wire 3 a, butthis is not restrictive.

FIG. 36 is a top plan view of an electroluminescent device according toa non-limiting example embodiment. FIG. 37 is a schematic diagram ofwires in a first light transmitting region 610 a and a second lighttransmitting region 610 b of FIG. 36, according to a non-limitingexample embodiment.

Referring to FIG. 36 and FIG. 33, an electroluminescent device mayinclude an emission area 500 and an outer non-emission area 600. Theouter non-emission area 600 may include an outer inorganic surfaceportion 620 that surrounds the emission area 500, an outer buffer area630 that is located between the emission area 500 and the outerinorganic surface portion 620, a first light transmitting region 610 a,and a second light transmitting region 610 b. The first lighttransmitting region 610 a and the second light transmitting region 610 bmay be surrounded by the outer inorganic surface portion 620 and may bepartially surrounded by the emission area 500.

Aspects of the present non-limiting example embodiment having aplurality of light transmitting regions may be employed in non-limitingexample embodiments shown in FIG. 1, FIG. 22. FIG. 28. FIG. 30, and FIG.31.

The first light transmitting region 610 a may have a hole, and thesecond light transmitting region 610 b may also have a hole. When adirection in which the first wire 41 a or the second wire 41 b extendsis called a horizontal direction I-1D, the second light transmittingregion 610 b may be spaced apart from the first light transmittingregion 610 a in an oblique direction OD. Therefore, pixels at theperiphery of the first and second light transmitting regions 610 a and610 b may efficiently receive a signal from at least one of the left andright directions in a plan view and at least one of the top and bottomdirections in a plan view.

FIG. 38 is a top plan view of an electroluminescent device according toa non-limiting example embodiment.

Referring to FIG. 38, a lower structure 25 may include an emission area700 and an outer non-emission area 800. The outer non-emission area 800may include an outer inorganic surface portion 820 that surrounds theemission area 700, a first outer buffer area 800 a that is locatedbetween the emission area 700 and the outer inorganic surface portion820, a second outer buffer area 800 b that is located outside the outerinorganic surface portion 820 and is partially surrounded by theemission area 700, a light transmitting region 810 that is surrounded bythe outer inorganic surface portion 820 and is partially surrounded bythe emission area 700, and an inorganic surface island 7 that issurrounded by the second outer buffer area 800 b.

The light transmitting region 810 may have higher light transmittancethan the emission area 700 or the second outer buffer area 800 b. Thelight transmitting region 810 may include a hole. In anotherimplementation, the light transmitting region 810 may have a non-holestructure.

When a surface of the second outer buffer area 800 b is only surroundedby an organic material, the inorganic surface island 7 may be surroundedby the second outer buffer area 800 b. The inorganic surface island 7may be at least a portion of a surface of an antistatic structure, atleast a portion of a surface of a lighting circuit structure, contactpads of a test circuit, and the like. In another implementation, theinorganic surface island 7 may be omitted.

A surface of at least one of at least a part of the first wire 41 a, atleast a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7 may be included in theouter inorganic surface portion 820 shown in FIG. 38. In anotherimplementation, a surface of at least one of at least a part of thefirst wire 41 a, at least a part of the second wire 41 b, and at least apart of the connection member 43 shown in FIG. 4 to FIG. 7 may belocated under the outer inorganic surface portion 820 shown in FIG. 38.

FIG. 39 is a schematic diagram of a wiring structure in theelectroluminescent device shown in FIG. 38, according to a non-limitingexample embodiment.

Referring to FIG. 39, one connection member 43 bypasses the lighttransmitting region 810 along a top side of the light transmittingregion 810. The other connection member 43 bypasses the lighttransmitting region 810 along a bottom side of the light transmittingregion 810. A direction along which a sixth wire 47 extends does notpass through the light transmitting region 810 and, thus, the sixth wire47 may not have a structure like the connection member 43. A first wire41 a, a second wire 41 b, and the sixth wire 47 may have protrusions andrecesses 4 that are located at side walls of passing portions 5 thatpass through the outer inorganic surface portion 820. The length of amoisture and oxygen permeation path may extend due to the protrusionsand recesses 4. Here, the passing portions 5 may be included in theouter inorganic surface portion 820 or may be located under the outerinorganic surface portion 820.

The protrusions and recesses 4 according to the present non-limitingexample embodiment may be employed to the electroluminescent deviceshown in FIG. 31 and FIG. 32. In addition, the protrusions and recesses4 according to a non-limiting example embodiment may be applied to theconnection members 43 d, 43 e, and 43 f of FIG. 24, the connectionmembers 43 d and 43 e of FIG. 25, the connection members 43 d, 43 e, and43 f of FIG. 26, the connection members 43 d and 43 e of FIG. 27, andthe connection members 43 a, 43 b-1, and 43 b-2 of FIG. 29.

Referring back to FIG. 39, the sixth wire 47 may sequentially passthrough the first outer buffer area 800 a, the outer inorganic surfaceportion 820, the second outer buffer area 800 b, the outer inorganicsurface portion 820, and the first outer buffer area 800 a such that thesixth wire 47 may have two passing portions 5. Alternatively, the sixthwire 47 may have a single passing portion 5 when the sixth wire 47sequentially passes through the first outer buffer area 800 a, and theouter inorganic surface portion 820, and, then, is connected to a driverand the like in the second outer buffer area 800 b.

FIG. 40 shows a driving current supply structure included in theelectroluminescent device shown in FIG. 38, according to a non-limitingexample embodiment.

Referring to FIG. 40, the lower structure 25 may include an emissionarea 500 and an outer non-emission area 600. The outer non-emission area600 may include an outer inorganic surface portion 820 that surroundsthe emission area 500, a first outer buffer area 600 a that is locatedbetween the outer inorganic surface portion 820 and the emission area500, a second outer buffer area 600 b that is located outside the outerinorganic surface portion 820 and partially surrounded by the emissionarea 500, and a light transmitting region 810 that is surrounded by thesecond outer buffer area 600 b and partially surrounded by the emissionarea 500. The light transmitting region 810 may have a hole.

The outer inorganic surface portion 820 may include an extension portion820 a that extends between the emission area 500 and the lighttransmitting region 810. The light transmitting region 810 is partiallysurrounded by the outer inorganic surface portion 820.

First and second portions 9 a and 9 b of the second outer bus wire 9 maybe connected to each other by a third portion 9 d. The second outer buswire 9 may extend in a first direction D1 such that a second outer buswire 9 sequentially passes an outer inorganic surface portion 820, asecond outer buffer area 600 b, and the outer inorganic surface portion820.

A side face of a passing portion 5 a of the second outer bus wire 9,passing through the outer inorganic surface portion 820, may haveprotrusions and recesses 4 a. In addition, the passing portion 5 a ofthe second outer bus wire 9 may be included in the outer inorganicsurface portion 820 or may be located under the outer inorganic surfaceportion 820.

A first wire 2 a included in a second group G2 may extend in a seconddirection D2 such that the first wire 2 a sequentially passes throughthe emission area 500, the first outer buffer area 600 a, the outerinorganic surface portion 820, and the second outer buffer area 600 b.The first wire 2 a may be connected to the third portion 9 d of thesecond outer bus wire 9 in the second outer buffer area 600 b. A sideface of a passing portion 5 c that passes through the outer inorganicsurface portion 820 of the first wire 2 a may have protrusions andrecesses 4 c. In addition, the passing portion 5 c of the first wire 2 amay be included in the outer inorganic surface portion 820 or may belocated under the outer inorganic surface portion 820. The first wire 2a may have a bypass portion 2 a-1 that bypasses the light transmittingregion 810. In another implementation, when a direction in which thefirst wire 2 a extends does not pass through the light transmittingregion 810, a bypass portion is not required. In this case, a structurelike the bypass portion 2 a-1 may be omitted.

Unlike the first wire 2 a, a first wire 2 b included in the second groupG2 may not pass through the outer inorganic surface portion 820, and maynot be connected to the third portion 9 d of the second outer bus wire.The second group G2 may include only the first wires 2 a. In anotherimplementation, the second group G2 may include only the first wires 2b. In another implementation, the second group G2 may include both thefirst wire 2 a and the first wire 2 b.

A second wire 3 b may extend in the first direction D1 such that thesecond wire 3 b sequentially passes through the first outer buffer area600 a, the outer inorganic surface portion 820, the second outer bufferarea 600 b, the outer inorganic surface portion 820, and the first outerbuffer area 600 a. Here, a side wall of a passing portion 5 b thatpasses through the outer inorganic surface portion 820 of the secondwire 3 b may have protrusions and recesses 4 b. In addition, the passingportions 5 b of the second wire 3 b may be included in the outerinorganic surface portion 820 or may be located under the inorganicsurface portion 820.

The first wire 2 a and the second wire 3 b may be connected to eachother in the second outer buffer layer 600 b by a contact c3.

Unlike the second wire 3 b, a second wire 3 c may not pass through theouter inorganic surface portion 820. The lower structure 25 may includeonly the second wire 3 b. In another implementation, the lower structure25 may include only the second wire 3 c. In another implementation, thelower structure 25 may include both the second wire 3 b and the secondwire 3 c.

FIG. 41 is a top plan view of an electroluminescent device according toa non-limiting example embodiment.

Referring to FIG. 41, a lower structure 25 may include an emission area900 and an outer non-emission area 1000. The outer non-emission area1000 may include an outer inorganic surface portion 1020 that surroundsthe emission area 900, and an outer buffer area 1030 that is locatedbetween the emission area 900 and the outer inorganic surface portion1020. A notch 1010 may be used as a window and may be recessed inward atone side of the lower structure 25. One side of the emission area 900may be formed along the notch 1010. That is, one side of the emissionarea 900 may substantially conform to the notch 1010.

An encapsulation structure (refer to 31 of FIG. 2) included in anon-limiting example embodiment of FIG. 41 may be provided as amultilayer having flexibility. In another implementation, theencapsulation structure may be a rigid encapsulation structure having aninorganic sealant and an inorganic glass substrate. In theelectroluminescent device shown in FIG. 22, the encapsulation structure31 may be a flexible multilayer, which may be more advantageous than arigid encapsulation structure. In an implementation, in theelectroluminescent device of FIG. 41, the notch 1010 is provided at oneside of the lower structure 25 so that the emission area 900 may not bedamaged during a process for forming the inorganic sealant at theperiphery of the notch 1010 and, then, irradiating a laser to theinorganic sealant or a process for removing an area corresponding to thenotch 1010 in the inorganic glass substrate by using a laser and thelike. Accordingly, the rigid encapsulation structure may be efficientlyadopted in the electroluminescent device of FIG. 41.

FIG. 42 shows signal wiring in the electroluminescent device shown inFIG. 41 according to a non-limiting example embodiment.

Referring to FIG. 42, the notch 1010 may serve as the light transmittingregion in the previous non-limiting example embodiments. For example,the lower structure 25 may include a first wire 41 a that extends in adirection toward a first side 1010 a of the notch 1010 from the emissionarea 900 and a second wire 41 b that extends in a direction away from asecond side 1010 b that faces the first side 1010 a of the notch 1010toward the emission area 900. The notch 1010 may be located between thefirst and second wires 41 a and 41 b. The first wire 41 a and the secondwire 41 b may be located on substantially the same layer. A surface ofat least one of at least a part of the first wire 41 a and at least apart of the second wire 41 b may be used as the outer inorganic surfaceportion 1020.

According to a non-limiting example embodiment, a first driver 42 a anda second driver 42 b may be a first data driver and a second datadriver, respectively, and, the first and second wires 41 a and 41 b maybe first and second data wires, respectively, that supply a data signalto a source area of a transistor included in each pixel circuit. In thiscase, the first data driver may be located on a first side of the lowerstructure 25 and the second driver may be located on a second side thatis substantially different from the first side of the lower structure25. Here, the first side and the second side may be substantiallyopposite to each other.

The wire structures shown in FIG. 4 to FIG. 7 may be employed to theelectroluminescent device of FIG. 41. According to a non-limitingexample embodiment, the notch 1010 may be located on a third side 25 c,which is a long side of the lower structure 25, and a data wireextending along a direction in which the long side of the lowerstructure 25 extends may extend while circumventing the notch 1010. Asurface of at least one of at least a part of the first wire 41 a, atleast a part of the second wire 41 b, and at least a part of theconnection member 43 shown in FIG. 4 to FIG. 7 may be included in theouter inorganic surface portion 1020 shown in FIG. 41. In anotherimplementation, a surface of at least one of at least a part of thefirst wire 41 a, at least a part of the second wire 41 b, and at least apart of the connection member 43 shown in FIG. 4 to FIG. 7 may belocated under the outer inorganic surface portion 1020 shown in FIG. 41.

The touch panels shown in FIG. 12 to FIG. 20 may be employed to theelectroluminescent device of FIG. 41. According to a non-limitingexample embodiment, the first sensing electrode 51 a-1 and the dummyelectrode 53 a of FIG. 12, the first sensing electrode 51 a-4 or thesecond sensing electrode 52 a-4 of FIG. 15, the sensing electrode 54 a-1of FIG. 16, and the upper dummy electrode 63 a, the lower dummyelectrode 83 a, the vertical sensing area 70 a, the lower horizontalsensing electrode 82 a, and the upper horizontal sensing electrode 62 aof FIG. 19 may not overlap the outer inorganic surface portion 1020 ofFIG. 41. According to a non-limiting example embodiment, the firstconnection member 51 d and second connection member 52 d of FIG. 13 mayoverlap the outer non-emission area 1000 of FIG. 41.

FIG. 43 is cross-sectional view taken along the lines II-II′ and in FIG.41, according to a non-limiting example embodiment.

Referring to FIG. 43, the connection member 43 may be located under theouter inorganic surface portion 1020. Thus, when a plurality ofconnection members 43 are used, an area that the plurality of connectionmembers 43 occupy may be located under the outer inorganic surfaceportion 1020 to enhance the degrees of freedom on design of the emissionarea 900 while minimizing signal interference due to the plurality ofconnection members 43, which may occur in the emission area 900. Inanother implementation, the connection member 43 may be included in theouter inorganic surface portion 1020.

Referring to the cross-section taken along the line II-II′ in FIG. 43and the cross-section taken along the line in FIG. 43, the side face 25f of the lower structure 25 is located on a plane on which the side face31 f of the encapsulation structure 31 is located. This means that, whena portion near the line III-III′ in FIG. 43 and a portion near the lineIII-III′ in FIG. 43 are formed, the side face 25 f of the lowerstructure 25 and the side face 31 f of the encapsulation structure 31may be etched through substantially the same process by using laseretching or an etching solution.

FIG. 44 is a cross-sectional view taken along the lines II-II′ and inFIG. 41, according to a non-limiting example embodiment.

Referring to FIG. 44, in the cross-section taken along the line II-II′in FIG. 44, the side face 25 f of the lower structure 25 and the sideface 31 f of the encapsulation structure 31 are located on substantiallythe same plane. However, in the cross-section taken along the line inFIG. 44, the side face 31 f of the encapsulation structure 31 may belocated further inside than the side face 25 f of the lower structure25, for example, because an opened outer inorganic surface portion 1021that is not covered by the encapsulation structure 31 may be provided.This means that, when a portion near the line II-II′ in FIG. 44 isformed, the side face 25 f of the lower structure 25 and the side face31 f of the encapsulation structure 31 may be etched throughsubstantially the same process by using laser etching or an etchingsolution but other portions may not be simultaneously etched throughsubstantially the same process.

An outer lower connection wire 83-1 that substantially surrounds theemission area 900 may be located on an interlayer insulation layer 17.The outer lower connection wire 83-1 may be formed together with asource/drain electrode 18 through substantially the same process. Anouter upper connection wire 81-1 may be located on a planarization layer19, and may make a contact with an upper electrode 23 and the outerlower connection wire 83-1. The outer upper connection wire 81-1 may beformed by substantially the same process of forming the lower electrode20. The outer lower connection wire 83-1 may have a shape thatsubstantially surrounds the emission area 900. When the upper electrode23 is a cathode, electrons may be sequentially transmitted to the upperelectrode 23 through the outer lower connection wire 83-1 and the outerupper connection wire 81-1. The outer lower connection wire 83-1 may beelectrically connected to a power source that is located outside theelectroluminescent device.

According to a non-limiting example embodiment, in the cross-sectiontaken along the line III-III′ in FIG. 44, the outer upper connectionwire 81-1 may be omitted and the upper electrode 23 may make a contactwith the outer lower connection wire 83-1. According to anothernon-limiting example embodiment, in the cross-section taken along theline in FIG. 44, the outer lower connection wire 83-1 may be omitted.According to another non-limiting example embodiment, in thecross-section taken along the line in FIG. 44, the outer lowerconnection wire 83-1 and the outer upper connection wire 81-1 may beomitted.

The electroluminescent device shown in FIG. 41 may include the drivingcurrent supply structure shown in FIG. 32, FIG. 33, FIG. 34, and FIG.35.

FIG. 45 is a top plan view of an electroluminescent device according toa non-limiting example embodiment.

Referring to FIG. 45, a notch 1010 that is recessed inward in a seconddirection D2 may have sloped side faces 1010 s. The notch 1010 may havethe sloped side faces 1010 s. Thus, an angular portion Y of the notch1010 may be realized as an obtuse angle rather than a right angle or anacute angle so that a process failure that may occur while the angularportion Y is formed or a progressive failure that may occur due to theangular portion Y may be reduced. The sloped side faces 1010 s may be,for example, straight-lined or may be at least partially curved.

The touch panels shown in FIG. 12 to FIG. 20 may be employed to theelectroluminescent device shown in FIG. 45. According to a non-limitingexample embodiment, the first sensing electrode 51 a-1 of FIG. 12, thefirst sensing electrode 51 a-4 or the second sensing electrode 52 a-4 ofFIG. 15, the sensing electrode 54 a-1 of FIG. 16, and the upper dummyelectrode 63 a, the lower dummy electrode 83 a, the vertical sensingarea 70 a, the lower horizontal sensing electrode 82 a, and the upperhorizontal sensing electrode 62 a of FIG. 19 may not overlap the outerinorganic surface portion 1020 of FIG. 45. According to a non-limitingexample embodiment, the first connection member 51 d and the secondconnection member 52 d of FIG. 13 may overlap the outer non-emissionarea 1000 of FIG. 45.

FIG. 46 shows the driving current supply structure included in the areaE of FIG. 45 according to a non-limiting example embodiment.

Referring to FIG. 46, a sloped portion 9 e may be located between afirst portion 9 a and a third portion 9 c of a second outer bus wire 9.The sloped portion 9 e may have a shape of a sloped bar with respect tothe first portion 9 a and the third portion 9 c. The sloped portion 9 emay be, for example, straight-lined or may be partially curved. A firstwire 2 c may be connected to the sloped portion 9 e, and first wires 2may be connected to the first portion 9 a and the third portion 9 c. Thesecond outer bus wire 9 and the first wire 2 c may be integrally formedas one-piece. The first wires 2 c may extend in the second direction D2while overlapping the emission area 900.

According to a non-limiting example embodiment, when an outer edge of anemission zone is not located inside an edge of a pixel circuit zone, thesecond outer bus wire 9 may at least partially overlap at least one ofthe emission zone and the lower electrode (refer to reference numeral 20in FIG. 2) while being located outside the edge of the pixel circuitarea so that the area of the emission area 900 may be widened whiledisposing the second outer bus wire 9 as relatively close to the pixelcircuit area as possible.

FIG. 47 shows the driving current supply structure included in the areaE of FIG. 45 according to a non-limiting example embodiment.

Referring to FIG. 47, the driving current supply structure may include asecond wire 3 a that extends in a third direction D3 that issubstantially perpendicular to the second direction D2. The second wire3 a may not extend to the outer buffer area 1030. Thus, the second wire3 a may not be connected to the sloped portion 9 e. The second wire 3 amay be located on a layer that is substantially different from a layeron which the first wires 2 and 2 c are disposed, and may be connected tothe first wires 2 and 2 c through the contacts c1. The first wires 2 and2 c and the second wire 3 a may overlap the emission area 900. Inaddition, the second wire 3 a may be used as an electrode included in acapacitor of a pixel circuit. For example, the second wire 3 a may becommonly used as an electrode of a capacitor included in a first pixelcircuit and an electrode of a capacitor included in a second pixelcircuit that is adjacent to the first pixel circuit. The second wire 3 amay be used as an electrode included in a capacitor of a pixel circuit.Thus, an additional process for forming the electrode included in thecapacitor of the pixel circuit may be avoided, thereby increasingintegration of the pixel circuit.

The second wire 3 a may not be connected to the sloped portion 9 e.Thus, a portion for connection with the second wire 3 a may not beformed in the sloped portion 9 e. Accordingly, the width of the slopedportion 9 e may be relatively narrowed so that the degrees of freedom ofwiring design and the degrees of freedom of peripheral circuit designmay be enhanced in the outer inorganic surface portion 1020 and theouter buffer area 1030.

In addition, the second wire 3 a may not extend to the outer buffer area1030. Thus, a signal interference problem between the second wire 3 aand a peripheral circuit structure that may be formed in the outerbuffer area 1030 in the outer buffer area 1030 may be reduced. Examplesof the peripheral circuit may include a lighting circuit, an anti-staticcircuit, and the like.

FIG. 48 shows the driving current supply structure included in the areaE of FIG. 45 according to a non-limiting example embodiment.

Referring to FIG. 48, compared to the second wire 3 a shown in FIG. 47,the second wire 3 a may extends to the outer buffer area 1030 and may beconnected to the sloped portion 9 e through contact c2. Thus, the secondwire 3 a may be promptly provided with a driving current directly fromthe sloped portion 9 e. The first wires 2 and 2 c and the second wire 3a may overlap the emission area 900. In addition, the second wire 3 amay be used as an electrode included in a capacitor of a pixel circuit.For example, the second wire 3 a may be commonly used as an electrode ofa capacitor included in a first pixel circuit and an electrode of acapacitor included in a second pixel circuit that is adjacent to thefirst pixel circuit. When the second wire 3 a is used as an electrodeincluded in a capacitor of a pixel circuit, an additional process forforming the electrode included in the capacitor of the pixel circuit maybe avoided, thereby increasing integration of the pixel circuit.

FIG. 49 shows the driving current supply structure included in the areaE of FIG. 45 according to a non-limiting example embodiment.

Referring to FIG. 49, the sloped portion 9 e may include a first part 9e-1 that extends in the second direction D2 and a second part 9 e-2 thatextends in the third direction D3. The first part 9 e-1 and the secondpart 9 e-2 may be alternately connected to each other. Thus, the slopedportion 9 e may have a substantially stepped shape. The sloped portion 9e having the substantially stepped shape may be closely attached to anedge of a pixel circuit area having a shape of a matrix having aplurality of pixel circuit zones, each having a quadrangular edge sothat a spatial margin for wire design may be provided.

According to a non-limiting example embodiment, the first parts 9 e-1may have substantially the same length so as to more closely attach thesloped portion 9 e having the substantially stepped shape to the edge ofthe pixel circuit area. In another implementation, at least two of thefirst parts 9 e-1 may have substantially different lengths so as to moreclosely attach the sloped portion 9 e having the substantially steppedshape to the edge of the pixel circuit area.

The second part 9 e-2 may be connected to the first wire 2 c thatextends in the second direction D2. The first wire 2 c may be integrallyformed as one-piece with the second outer bus wire 9. In FIG. 49, asingle first wire 2 c is connected to all the second parts 9 e-2, butthe present non-limiting example embodiment is not limited thereto.According to a non-limiting example embodiment, n current wires may beconnected to one of the second parts 9 e-2, m current wires may beconnected to another second part 9 e-2, and “n” and “m” may be naturalnumbers that are substantially different from each other. For example,two first wires 2 c may be connected to one second part 9 e-2, and threefirst wires 2 c may be connected to another second part 9 e-2. In thiscase, a length of the second part 9 e-2 to which the three first wires 2c are connected may be substantially longer than a length of the secondpart 9 e-2 to which the two first wires 2 c are connected.

A number of first wires 2 c connected to each of the second parts 9 e-2may be set to be substantially different from one another. Thus, a shapeof the sloped portion 9 e may be formed corresponding to the sloped sidefaces 1010 s not only in a case that the sloped side faces 1010 s arestraight-lined but also in a case that the sloped side faces 1010 s areat least partially curved. In addition, at least two second parts 9 e-2may have substantially different lengths. Thus, the sloped portion 9 ehaving the substantially stepped shape may be more closely attached tothe edge of the pixel circuit area.

FIG. 50 shows the driving current supply structure included in the areaE of FIG. 45, according to a non-limiting example embodiment.

Referring to FIG. 50, the driving current supply structure may include asecond wire 3 a that extends in a third direction D3 that issubstantially perpendicular to the second direction D2 and is located ona layer that is substantially different from a layer on which the firstwire 2 c is formed. The second wire 3 a may not extend to the outerbuffer area 1030. Thus, the second wire 3 a may not be connected to thesecond part 9 e-2. The first wires 2 and 2 c may be connected to thesecond wire 3 a through the contacts c1. The first wires 2 and 2 c andthe second wire 3 a may overlap the emission area 900. In addition, thesecond wire 3 a may be used as an electrode included in a capacitor of apixel circuit. For example, the second wire 3 a may be commonly used asan electrode of a capacitor included in a first pixel circuit and anelectrode of a capacitor included in a second pixel circuit that isadjacent to the first pixel circuit. The second wire 3 a may be used asan electrode included in a capacitor of a pixel circuit. Thus, anadditional process for forming the electrode included in the capacitorof the pixel circuit may be avoided, thereby increasing integration ofthe pixel circuit.

FIG. 51 shows the driving current supply structure included in the areaE of FIG. 45 according to a non-limiting example embodiment.

Referring to FIG. 51, compared to the second wire 3 a shown in FIG. 50,the second wire 3 a may extend to the outer buffer area 1030 and may beconnected to the first parts 9 e-1 through the contacts c2. The firstwires 2 and 2 c may overlap the emission area 900. In addition, thesecond wire 3 a may be used as an electrode included in a capacitor of apixel circuit. For example, the second wire 3 a may be commonly used asan electrode of a capacitor included in a first pixel circuit and anelectrode of a capacitor included in a second pixel circuit. The secondwire 3 a may be used as an electrode included in a capacitor of a pixelcircuit. Thus, an additional process for forming the electrode includedin the capacitor of the pixel circuit may be avoided, thereby increasingintegration of the pixel circuit.

According to a non-limiting example embodiment, at least two of thesecond parts 9 e-2 may have substantially different lengths. In thiscase, the number of second wires 3 a connected to each second part 9 e-2may be substantially different from each other.

The driving current supply structures shown in FIG. 46 to FIG. 51 may beemployed to the electroluminescent device shown in FIG. 30, FIG. 31,FIG. 36, or FIG. 38.

FIG. 52 is a top plan view of an electroluminescent device according toa non-limiting example embodiment. FIG. 53 is a cross-sectional viewtaken along the line II-II′ in FIG. 52, according to a non-limitingexample embodiment.

Referring to FIG. 52 and FIG. 53, a lower structure 25 may include anemission area 2010 and an outer non-emission area 2020. The outernon-emission area 2020 may include an opened outer inorganic surfaceportion 2021, a first outer inorganic surface portion 2022, an outerorganic surface portion 2023, a second outer inorganic surface portion2024, and an outer buffer area 2025. A notch 2000 may be used as awindow and may be recessed inward at one side of the lower structure 25.One side of the emission area 2010 may be formed along the notch 2000 ormay substantially conform to the notch 2000.

The opened outer inorganic surface portion 2021 having a shape thatsurrounds the emission area 2010 may be located in the outermost regionof the outer non-emission area 2020, the first outer inorganic surfaceportion 2022 that is connected to the opened outer inorganic surfaceportion 2021 and surrounds the emission area 2010 may be located furtherinside than the opened outer inorganic surface portion 2021, the outerorganic surface portion 2023 that is connected to the first outerinorganic surface portion 2022 and partially or completely surrounds theemission area 2010 may be located further inside than the first outerinorganic surface portion 2022, the second outer inorganic surfaceportion 2024 that is connected to the outer organic surface portion 2023and surrounds the emission area 2010 may be located further inside thanthe outer organic surface portion 2023, and the outer buffer area 2025that is connected to the second outer inorganic surface portion 2024 andsurrounds the emission area 2010 may be located further inside than thesecond outer inorganic surface portion 2024.

The opened outer inorganic surface portion 2021 may not be covered by anencapsulation structure 31. The first outer inorganic surface portion2022 and the second outer inorganic surface portion 2024 may make adirect contact with the encapsulation structure 31.

The lower structure 25 may include an outer organic dam 71, and asurface of the outer organic dam 71 may correspond to the outer organicsurface portion 2023 of the lower structure 25. In FIG. 52, the firstouter inorganic surface portion 2022 and the second outer inorganicsurface portion 2024 may not be connected to each other, but this is notrestrictive. The first outer inorganic surface portion 2022 and thesecond outer inorganic surface portion 2024 may be connected to eachother in some section.

A side face 25 f of the lower structure 25 and a side face 31 f of theencapsulation structure 31 may not be located on substantially the sameplane and the side face 31 f of the encapsulation structure 31 may belocated further inside than the side face 25 f of the lower structure25.

Here, the emission area 2010 may be relatively narrowed due to adistance between the side face 25 f of the lower structure 25 and theside face 31 f of the encapsulation structure 31 and, thus, it isadvantageous that at least a part of a connection member 43 a may belocated under the opened outer inorganic surface portion 2021, at leasta part of a connection member 43 b may be included in the first outerinorganic surface portion 2022, or at least a part of a connectionmember 43 b may be located under the first outer inorganic surfaceportion 2022.

The lower structure 25 may include a first side 25 a, a second side 25 bthat is located substantially opposite to the first side 25 a, a thirdside 25 c that is located between the first side 25 a and the secondside 25 b, and a fourth side 25 d that is located substantially oppositeto the third side 25 c. A driving current may be supplied to the firstside 25 a of the lower structure 25 to drive the electroluminescentunit. The notch 2000 may be formed at the second side 25 b of the lowerstructure 25. In FIG. 52, the notch 2000 is substantially closer to thethird side 25 c of the lower structure 25 than to the fourth side 25 dof the lower structure 25, but this is not restrictive. The notch 200may be located at substantially the same distance from the fourth side25 d of the lower structure 25 and the third side 25 c of the lowerstructure 25.

According to a non-limiting example embodiment, the outer non-emissionarea 2020 may have substantially different widths at the first side 25 aand the second side 25 b of the lower structure 25, but the width of theouter non-emission area 2020 may be substantially the same at the thirdside 25 c and the fourth side 25 d. According to a non-limiting exampleembodiment, the width of the outer non-emission area 2020 at the firstside 25 a of the lower structure 25 may be substantially greater thanthat of the outer non-emission area 2020 at the second side 25 b of thelower structure 25. This may help ensure a spatial margin in design ofwiring for supplying a driving current for driving theelectroluminescent unit to the first side 25 a by supplying the drivingcurrent to the first side 25 a of the lower structure 25.

According to a non-limiting example embodiment, a width of the outerbuffer area 2025 at the first side 25 a may be substantially differentfrom a width of the outer buffer area 2025 at the second side 25 b ofthe lower structure 25, while the width of the outer buffer area 2025may be substantially the same at the third side 25 c and the fourth side25 d of the lower structure 25. According to a non-limiting exampleembodiment, the width of the outer buffer area 2025 at the second side25 b of the lower structure 25 may be substantially smaller than that ofthe outer buffer area 2025 at the third side 25 c or the fourth side 25d of the lower structure 25. When a peripheral circuit such as a scandriver, an emission driver, and the like is integrated in the outerbuffer area 2025 at the third side 25 c and the fourth side 25 d of thelower structure 25, the width of the outer buffer area 2025 may be moreincreased at the third side 25 c or the fourth side 25 d than at thesecond side 25 b of the lower structure 25. According to a non-limitingexample embodiment, the width of the outer buffer area 2025 at the firstside 25 a of the lower structure 25 may be substantially greater thanthe width of the outer buffer area 2025 at the second side 25 b of thelower structure 25. This may help ensure a spatial margin in design ofwiring for supplying a driving current for driving theelectroluminescent unit to the first side 25 a by supplying the drivingcurrent to the first side 25 a of the lower structure 25.

According to a non-limiting example embodiment, the width of the secondouter inorganic surface portion 2024 at the first side 25 a of the lowerstructure 25 and the width of the second outer inorganic surface portion2024 at the second side 25 b of the lower structure 25 may besubstantially different from each other, while the width of the outerinorganic surface portion 2024 may be substantially the same at thethird side 25 c and the fourth side 25 d of the lower structure.According to a non-limiting example embodiment, the width of the secondouter inorganic surface portion 2024 at the first side 25 a of the lowerstructure 25 may be substantially greater than the width of the secondouter inorganic surface portion 2024 at the second side 25 b of thelower structure. This may help ensure a spatial margin in design ofwiring for supplying a driving current for driving theelectroluminescent unit to the first side 25 a by supplying the drivingcurrent to the first side 25 a of the lower structure 25.

According to a non-limiting example embodiment, the width of the outerorganic surface portion 2023 at the first side 25 a of the lowerstructure 25 and the width of the outer organic surface portion 2023 atthe second side 25 b of the lower structure 25 may be substantiallydifferent from each other, while the width of the outer organic surfaceportion 2023 may be substantially the same at the third side 25 c andthe fourth side 25 d of the lower structure. According to a non-limitingexample embodiment, the width of the outer organic surface portion 2023at the first side 25 a of the lower structure 25 may be substantiallygreater than the width of the outer organic surface portion 2023 at thesecond side 25 b of the lower structure. This may help ensure a spatialmargin in design of wiring for supplying a driving current for drivingthe electroluminescent unit to the first side 25 a by supplying thedriving current to the first side 25 a of the lower structure 25.According to a non-limiting example embodiment, the outer organicsurface portion 2023 may have a first width at the second side 25 b, thethird side 25 c, and the fourth side 25 d of the lower structure 25, mayhave a second width at the first side 25 a of the lower structure 25,which is substantially different from the first width. For example, thesecond width may be substantially greater than the first width.According to a non-limiting example embodiment, the outer organicsurface portion 2023 may have substantially the same width at the firstside 25 a, the second side 25 b, the third side 25 c, and the fourthside 25 d of the lower structure 25.

According to a non-limiting example embodiment, the width of the firstouter inorganic surface portion 2022 at the first side 25 a of the lowerstructure and the width of the first outer inorganic surface portion2022 at the second side 25 b may be substantially different from eachother, but the first outer inorganic surface portion 2022 may havesubstantially the same width at the third side 25 c and the fourth side25 d of the lower structure 25. According to a non-limiting exampleembodiment, the width of the first outer inorganic surface portion 2022at the first side 25 a of the lower structure 25 may be substantiallygreater than the width of the first outer inorganic surface portion 2022at the second side 25 b of the lower structure 25. This may help ensurea spatial margin in design of wiring for supplying a driving current fordriving the electroluminescent unit to the first side 25 a by supplyingthe driving current to the first side 25 a of the lower structure 25.

According to a non-limiting example embodiment, the width of the openedouter inorganic surface portion 2021 at the first side 25 a of the lowerstructure 25 and the width of the opened outer inorganic surface portion2021 at the second side 25 b of the lower structure 25 may besubstantially different from each other, while the width of the openedouter inorganic surface portion 2021 may be substantially the same atthe third side 25 c and the fourth side 25 d of the lower structure.According to a non-limiting example embodiment, the width of the openedouter inorganic surface portion 2021 at the first side 25 a of the lowerstructure 25 may be substantially greater than the width of the openedouter inorganic surface portion 2021 at the second side 25 b of thelower structure 25. This may help ensure a spatial margin in design ofwiring for supplying a driving current for driving theelectroluminescent unit to the first side 25 a by supplying the drivingcurrent to the first side 25 a of the lower structure 25. According to anon-limiting example embodiment, the opened outer inorganic surfaceportion 2021 may have a first width at the second side 25 b, the thirdside 25 c, and the fourth side 25 d of the lower structure 25, and theopened outer inorganic surface portion 2021 may have a second width thatis substantially different from the first width at the first side 25 aof the lower structure 25. For example, the second width may besubstantially greater than the first width. According to a non-limitingexample embodiment, the opened outer inorganic surface portion 2021 mayhave substantially the same width at the first side 25 a, the secondside 25 b, the third side 25 c, and the fourth side 25 d of the lowerstructure 25.

The touch panels shown in FIG. 12 to FIG. 20 may be employed to theelectroluminescent device shown in FIG. 52. According to a non-limitingexample embodiment, the first sensing electrode 51 a-1 and the dummyelectrode 53 a of FIG. 12, the first sensing electrode 51 a-4 or thesecond sensing electrode 52 a-4 of FIG. 15, the sensing electrode 54 a-1of FIG. 16, and the upper dummy electrode 63 a, the lower dummyelectrode 83 a, the vertical sensing area 70 a, the lower horizontalsensing electrode 82 a, and the upper horizontal sensing electrode 62 aof FIG. 19 may not overlap the outer inorganic surface portion 1020 ofFIG. 52. According to a non-limiting example embodiment, the firstconnection member 51 d and the second connection member 52 d of FIG. 13may overlap the outer non-emission area 2020 of FIG. 52.

The electroluminescent device shown in FIG. 52 may include the drivingcurrent supply structure shown in FIG. 32, FIG. 33, FIG. 34, FIG. 35,FIG. 46, FIG. 47. FIG. 48. FIG. 49, FIG. 50, or FIG. 51.

FIG. 54 is a cross-sectional view taken along the line IV-IV′ in FIG.52, according to a non-limiting example embodiment.

Referring to FIG. 54, an outer organic structure 71 a is located betweenthe opened outer inorganic surface portion 2021 and the first outerinorganic surface portion 2022 at the first side 25 a of the lowerstructure 25. The outer organic structure 71 a may have an opened outerorganic surface portion 2023 a. The opened outer organic surface portion2023 a may be opened with respect to the encapsulation structure 31. Indetail, the opened outer organic surface portion 2023 a may have atleast a portion that is not covered by the inorganic lower surface 31 dof the encapsulation structure 31. The opened outer organic surfaceportion 2023 a may not be wholly covered by the inorganic lower surface31 d of the encapsulation structure 31, but may be wholly covered byanother member after the encapsulation structure 31 is formed.

The outer organic structure 71 a may protect a conductive structure suchas a wire that is not covered by the inorganic lower surface 31 d. Inaddition, the outer organic structure 71 may increase a width of theouter non-emission area 2020 at the first side 25 a of the lowerstructure 25.

By way of summation and review, a general electronic device may have acamera in an area outside of an image display area of the electronicdevice so that a space for the electronic device to display an imagetends to be reduced. Consideration has been given to a structure inwhich a camera is installed in a display.

As described above, non-limiting example embodiments relate to anelectroluminescent device having a window such as a light transmittingregion, a hole, or a notch.

Non-limiting example embodiments may provide an electroluminescentdevice that may prevent permeation of moisture and oxygen into a displayeven through a camera is provided inside the display or at one side ofthe display. Non-limiting example embodiments may provide anelectroluminescent device in which a current is evenly transmitted evento a peripheral area where a camera is disposed. Non-limiting exampleembodiments may provide an electroluminescent device in which brightnessis uniform even in a peripheral area where a camera is disposed.Non-limiting example embodiments may provide an electroluminescentdevice in which a touch is well sensed even at a peripheral area where acamera is disposed.

DESCRIPTION OF SYMBOLS

100, 300, 500, 700, 900, 2010: emission area 200: non-emission area200a, 400, 600, 800, 1000, 2020: outer non-emission area 200b: innernon-emission area 201, 340, 600a, 600b, 630, 800a, 800b, 1030, 2025:outer buffer area 202: inner buffer area 220, 221, 420, 620, 820, 1020,1021, 2021, 2022, 2024: outer inorganic surface portion 2023, 2023a:outer organic surface portion 222, 222a, 222b, 222c, 222d: innerinorganic surface portion 210, 410, 610, 610a, 610b, 810: lighttransmitting region 10: optical member 11: buffer layer 12: active layer12c: channel region 12d: drain region 12s: source region 13: first gateinsulation layer 14: first gate electrode 15: second gate insulationlayer 16: second gate electrode 17: interlayer insulation layer 18:source/drain electrode 19: planarization layer 20: lower electrode 21:pixel defining layer 22: intermediate layer 22a: hole transporting layer22b: emission layer 22c: electron transporting layer 23: upper electrode24: passivation layer 25: lower structure 31: encapsulation structure31a: first inorganic layer 31b: organic layer 31c: second inorganiclayer 31d: inorganic lower surface 25f, 31f, 1010s: side face 39:polarization film 42a, 42b: driver 50: insulation layer 4, 4a, 4b, 4c:protrusions and recesses 5, 5a, 5b, 5c: passing portion 6: organicsurface island 7: inorganic surface island 43, 43a, 43b, 43b-1, 43b-2,43d, 43e, 43f: connection member 51c, 52c, 64a, 64b, 84a, 1010, 2000:notch 70, 70a, 70b, 70c, 70d, 70e: vertical sense area 71: outer organicdam 71a: outer organic structure 72: inner organic dam 77: inner buswire 820a: extension portion 51, 52, 54, 60, 60a, 60b, 80, 80a: touchelectrode 51a, 52a, 54a: sensing electrode 51b 52b: bridge electrode51d, 52d: first connection member 54b: touch wire 53, 53a, 53b, 63, 63a,63b, 83, 83a, 83b: dummy electrode 61, 81: vertical sensing electrode62, 62a, 62b, 82, 82a, 82b: horizontal sensing electrode 1, 1a, 1b, 1c:terminal wire 8, 9, 9a, 9b, 9c, 9c-1, 9d, 9e: outer bus wire 81-1, 82-1:upper connection wire 83-1, 84-1: lower connection wire

Non-limiting example embodiments have been disclosed herein, andalthough specific terms are employed, they are used and are to beinterpreted in a generic and descriptive sense only and not for purposeof limitation. In some instances, as would be apparent to one ofordinary skill in the art as of the filing of the present application,features, characteristics, and/or elements described in connection witha particular non-limiting example embodiment may be used singly or incombination with features, characteristics, and/or elements described inconnection with other non-limiting example embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. An electroluminescent device, comprising: a lowerstructure comprising an emission area and an outer non-emission areacompletely surrounding the emission area; and an encapsulation structurelocated on the lower structure and having an inorganic lower surface;and wherein the outer non-emission area has an outer inorganic surfaceportion completely surrounding the emission area and making a directcontact with the inorganic lower surface to form an inorganic-inorganiccontact region; and wherein the lower structure has a light transmittingregion having at least a portion surrounded by the emission area.
 2. Theelectroluminescent device of claim 1, wherein the light transmittingregion has a non-hole structure, is included in the outer non-emissionarea, is partially surrounded by the emission area, is located outerthan the inorganic-inorganic contact region, and is partially surroundedby the inorganic-inorganic contact region; and wherein the outernon-emission area includes a first outer buffer area located between theemission area and the inorganic-inorganic contact region to completelysurround the emission area and partially surround the light transmittingregion.
 3. The electroluminescent device of claim 2, wherein the outernon-emission area includes a second outer buffer area located outer thanthe inorganic-inorganic contact region to be partially surrounded by theemission area and completely surround the light transmitting region. 4.The electroluminescent device of claim 3, wherein the lower structurecomprises a wire extending in a direction from the first outer bufferarea toward the second outer buffer area to have a passing portionpassing through the inorganic-inorganic contact region.
 5. Theelectroluminescent device of claim 4, wherein the passing portion has aside wall having protrusions and recesses.
 6. The electroluminescentdevice of claim 4, wherein a surface of the passing portion is includedin the outer inorganic surface portion.
 7. The electroluminescent deviceof claim 3, wherein the outer non-emission area includes an inorganicsurface island located inside the second outer buffer area and partiallysurrounded by the emission area.
 8. The electroluminescent device ofclaim 1, wherein the light transmitting region has a non-hole structure,is included in the outer non-emission area, is partially surrounded bythe emission area, and is completely surrounded by theinorganic-inorganic contact region; and wherein the outer non-emissionarea comprises an outer buffer area located between the emission areaand the inorganic-inorganic contact region to completely surround theemission area and partially surround the light transmitting region. 9.The electroluminescent device of claim 8, wherein the outer non-emissionarea comprises an organic surface island located inside theinorganic-inorganic contact region and partially surrounded by theemission area.
 10. The electroluminescent device of claim 1, wherein thelight transmitting region has a hole, is included in the outernon-emission area, is partially surrounded by the emission area, and iscompletely surrounded by the inorganic-inorganic contact region; andwherein the outer non-emission area comprises an outer buffer arealocated between the emission area and the inorganic-inorganic contactregion to completely surround the emission area and partially surroundthe light transmitting region.
 11. The electroluminescent device ofclaim 10, wherein the outer non-emission area comprises an organicsurface island located inside the inorganic-inorganic contact region andpartially surrounded by the emission area.
 12. The electroluminescentdevice of claim 10, wherein the outer non-emission area comprises aportion of a wire; and wherein the portion is located within theinorganic-inorganic contact region in a plan view; wherein the portionis partially surrounded by the emission area.
 13. The electroluminescentdevice of claim 12, wherein the portion has a side wall havingprotrusions and recesses.
 14. The electroluminescent device of claim 12,wherein the portion has a surface included in the outer inorganicsurface portion.
 15. The electroluminescent device of claim 1, whereinthe light transmitting region has a non-hole structure, is included inthe outer non-emission area, is partially surrounded by the emissionarea, and is completely surrounded by the inorganic-inorganic contactregion; wherein the outer non-emission area comprises an outer bufferarea located between the emission area and the inorganic-inorganiccontact area to completely surround the emission area and the lighttransmitting region; and wherein the inorganic-inorganic contact regiondoes not extend between the emission area and the light transmittingregion.
 16. The electroluminescent device of claim 1, wherein the lowerstructure comprises an inner non-emission area completely surrounded bythe emission area; wherein the light transmitting region has a non-holestructure, and is included in the inner non-emission area; wherein theinner non-emission area has an inner buffer area completely surroundedby the emission area; and wherein the light transmitting region iscompletely surrounded by the inner buffer area.
 17. Anelectroluminescent device, comprising: a lower structure comprising anemission area and an outer non-emission area completely surrounding theemission area; and an encapsulation structure located on the lowerstructure and having an inorganic lower surface; and wherein the outernon-emission area has: an outer inorganic surface portion completelysurrounding the emission area and making a direct contact with theinorganic lower surface to form an inorganic-inorganic contact region; afirst outer buffer area located between the emission area and theinorganic-inorganic contact region to completely surround the emissionarea; a second outer buffer area located outer than theinorganic-inorganic contact region to be partially surrounded by theemission area; and an inorganic surface island located inside the secondouter buffer area and partially surrounded by the emission area.
 18. Anelectroluminescent device, comprising: a lower structure comprising anemission area and an outer non-emission area completely surrounding theemission area; and an encapsulation structure located on the lowerstructure and having an inorganic lower surface; and wherein the outernon-emission area has an outer inorganic surface portion completelysurrounding the emission area and making a direct contact with theinorganic lower surface to form an inorganic-inorganic contact region;and wherein an organic surface island is located inside theinorganic-inorganic contact region, and is partially surrounded by theemission area.
 19. An electroluminescent device, comprising: a lowerstructure including: a lower multilayer comprising a buffer layerincluding an inorganic material; a lower electrode located on the lowermultilayer; a pixel defining layer located on the lower multilayer tocover a side portion of the lower electrode; an intermediate multilayerlocated on the lower electrode and having at least one functional layer;and an upper electrode located on the intermediate multilayer; andwherein the lower structure has an emission area and a lighttransmitting region having a non-hole structure having at least aportion surrounded by the emission area; wherein the functional layerand/or the upper electrode is a common pattern layer having a shape fromwhich a portion corresponding the light transmitting region is removed;and wherein the buffer layer has a shape from which a portioncorresponding the light transmitting region is not removed.
 20. Theelectroluminescent device of claim 19, wherein the upper electrode has ashape from which a portion corresponding the light transmitting regionis removed; and wherein the lower structure comprises an organicpassivation layer which is located on the upper electrode to make adirect contact with the upper electrode, which has a conductive orsemi-conductive property, and which is a common pattern layer having ashape from which a portion corresponding the light transmitting regionis not removed.
 21. An electroluminescent device, comprising: a lowerstructure having an emission area including an electroluminescent unitcomprising a lower electrode, an intermediate multilayer located on thelower electrode, and an upper electrode located on the intermediatemultilayer, and a light transmitting region having a non-hole structurehaving at least a portion surrounded by the emission area; and whereinthe lower structure comprises an organic passivation layer which islocated on the upper electrode to make a direct contact with the upperelectrode, which has a conductive or semi-conductive property, and whichis a common pattern layer having a shape from which a portioncorresponding the light transmitting region is removed.
 22. Anelectroluminescent device, comprising: a lower structure comprising: aninorganic structure comprising a buffer layer including an inorganicmaterial; a planarization layer located on the inorganic structure; alower electrode located on the planarization layer; a pixel defininglayer located on the planarization layer to cover a side portion of thelower electrode; an intermediate multilayer located on the lowerelectrode; and an upper electrode located on the intermediatemultilayer; and wherein the lower structure has a light transmittingregion having a non-hole structure having at least a portion surroundedby the emission area; wherein the pixel defining layer has a shape fromwhich a portion corresponding the light transmitting region iscompletely removed; and wherein the buffer layer has a shape from whicha portion corresponding the light transmitting region is not removed.23. The electroluminescent device of claim 22, wherein the planarizationlayer has a shape from which a portion corresponding the lighttransmitting region is removed.
 24. The electroluminescent device ofclaim 23, further comprising an encapsulation structure having aninorganic lower surface; and wherein the inorganic lower surface makes adirect contact with the inorganic structure in the light transmittingregion.
 25. The electroluminescent device of claim 24, wherein the lowerstructure comprises an organic passivation layer which is located on theupper electrode to make a direct contact with the upper electrode, whichhas a conductive or semi-conductive property, and which is a commonpattern layer having a shape from which a portion corresponding thelight transmitting region is removed.
 26. An electroluminescent device,comprising: a lower structure comprising: a planarization layer; a lowerelectrode located on the planarization layer; a pixel defining layerlocated on the planarization layer to cover a side portion of the lowerelectrode; an intermediate multilayer located on the lower electrode andincluding at least one functional layer; and an upper electrode locatedon the intermediate multilayer; and wherein the lower structure has anemission area and a light transmitting region having a non-holestructure having at least a portion surrounded by the emission area;wherein the pixel defining layer has a shape from which a portioncorresponding the light transmitting region is not removed such that thepixel defining layer overlaps a central portion of the lighttransmitting region; and wherein the planarization layer has a shapefrom which a portion corresponding the light transmitting region is notremoved.
 27. The electroluminescent device of claim 26, wherein thefunctional layer and/or the upper electrode is a common pattern layerhaving a shape from which a portion corresponding the light transmittingregion is removed.
 28. An electroluminescent device, comprising: a lowerstructure having an inner non-emission area, an emission area completelysurrounding the inner non-emission area, and an outer non-emission areacompletely surrounding the emission area; and an encapsulation structurelocated on the lower structure and having a lower inorganic surface; andwherein the inner non-emission area has a light transmitting regionhaving a hole, an inner inorganic surface portion completely surroundingthe light transmitting region, and an inner buffer area completelysurrounding the inner inorganic surface portion; wherein the outernon-emission area includes an outer buffer area completely surroundingthe emission area and an outer inorganic surface portion completelysurrounding the outer buffer area; wherein the inner inorganic surfaceportion makes a direct contact with the lower inorganic surface to forman inner inorganic-inorganic contact region completely surrounding thelight transmitting region; wherein the outer inorganic surface portionmakes a direct contact with the lower inorganic surface to form an outerinorganic-inorganic contact region completely surrounding the outerbuffer area; wherein the inner non-emission area includes a portion of awire; and wherein the portion of the wire has a surface included in theinner inorganic surface portion.
 29. An electroluminescent device,comprising: a lower structure having a light transmitting region and anemission area completely surrounding the light transmitting region; andan encapsulation structure located on the lower structure; and whereinthe lower structure comprises a current wire overlapping the emissionarea and an inner bus wire electrically connected to the current wireand located between the light transmitting region and the emission areasuch that the inner bus wire completely surrounds the light transmittingregion, and wherein the inner bus wire includes first parts extending ina first direction and second parts extending in a second directionsubstantially different from the first direction.
 30. Theelectroluminescent device of claim 29, wherein the first parts and thesecond parts are alternately connected to each other.
 31. Theelectroluminescent device of claim 29, wherein the inner bus wireincludes at least two of the first parts having substantially differentlengths and/or at least two of the second parts having substantiallydifferent lengths.